參數(shù)資料
型號(hào)： KMM53216004CK
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
中文描述： 1,600 × 32的DRAM上海藥物研究所利用16Mx4，4K的刷新，5V的
文件頁(yè)數(shù)： 7/21頁(yè)
文件大小： 445K
代理商： KMM53216004CK
DRAM MODULE
KMM53216004CK/CKG
Test condition : V
ih
/V
il
=2.4/0.8V, V
oh
/V
ol
=2.0/0.8V, output loading CL=100pF
Parameter
Symbol
-5
-6
Unit
Note
Min
20
8
50
30
10
10
5
3
3
15
5
Max
Min
25
10
60
35
10
10
5
3
3
15
5
Max
Hyper page mode cycle time
CAS precharge time (Hyper page cycle)
RAS pulse width (Hyper page cycle)
RAS hold time from CAS precharge
W to RAS precharge time(C-B-R refresh)
W to RAS hold time(C-B-R refresh)
Output data hold time
Output buffer turn off delay from RAS
Output buffer turn off delay from W
W to data delay
W pulse width
t
HPC
t
CP
t
RASP
t
RHCP
t
WRP
t
WRH
t
DOH
t
REZ
t
WEZ
t
WED
t
WPE
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
11
200K
200K
13
13
15
15
6,12
6
AC CHARACTERISTICS
(0
°
C
≤
T
A
≤
70
°
C, Vcc=5.0V
±
10%. See notes 1,2.)
NOTES
An initial pause of 200us is required after power-up followed
by any 8 RAS-only or CAS-before-RAS refresh cycles before
proper device operation is achieved.
Input voltage levels are Vih/Vil. V
IH
(min) and V
IL
(max) are
reference levels for measuring timing of input signals. Transi-
tion times are measured between V
IH
(min) and V
IL
(max) and
are assumed to be 5ns for all inputs.
Measured with a load equivalent to 2 TTL loads and 100pF.
Operation within the
t
RCD
(max) limit insures that
t
RAC
(max)
can be met.
t
RCD
(max) is specified as a reference point only.
If
t
RCD
is greater than the specified
t
RCD
(max) limit, then
access time is controlled exclusively by
t
CAC
.
Assumes that
t
RCD
≥
t
RCD
(max).
This parameter defines the time at which the output achieves
the open circuit and is not referenced for V
OH
or V
OL
.
t
WCS
is
non-restrictive operating parameter. It is included in
the data sheet as electrical characteristics only. If
t
WCS
≥
t
WCS
(min), the cycle is an early write cycle and the
data out pin will remain high impedance for the duration of
the cycle.
Either
t
RCH
or
t
RRH
must be satisfied for a read cycle.
These parameters are referenced to the CAS leading edge in
early write cycles.
Operation within the
t
RAD
(max) limit insures that
t
RAC
(max)
can be met.
t
RAD
(max) is specified as reference point only. If
t
RAD
is greater than the specified
t
RAD
(max) limit access time
is controlled by
t
AA
.
t
ASC
≥
6ns, Assume t
T
=2.0ns.
If RAS goes high before CAS high going, the open circuit
condition of the output is achieved by CAS high going. If CAS
goes high before RAS high going , the open circuit condition
of the output is achieved by RAS going.
1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
相關(guān)PDF資料
PDF描述
KMM53216004BKG 16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
KMM53216004CKG 16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
KMM5322104CKU 2M x 32 DRAM SIMM using 2Mx8 , 2K Refresh, 5V
KMM5322104CKUG 2M x 32 DRAM SIMM using 2Mx8 , 2K Refresh, 5V
KMM5322200C2W 2M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KMM53216004CKG 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
KMM5322104CKU 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 DRAM SIMM using 2Mx8 , 2K Refresh, 5V
KMM5322104CKUG 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 DRAM SIMM using 2Mx8 , 2K Refresh, 5V
KMM5322200C2W 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V
KMM5322200C2WG 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*