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參數(shù)資料
| 型號： | KMM5322200C2WG |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 2M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V |
| 中文描述： | 200萬× 32的DRAM上海藥物研究所使用1Mx16，每1000刷新，5V的 |
| 文件頁數(shù)： | 3/17頁 |
| 文件大?。?/td> | 280K |
| 代理商： | KMM5322200C2WG |
DRAM MODULE
KMM5322200C2W/C2WG
Rev. 0.0 (Nov. 1997)
- 3 -
KMM5322200C2W/C2WG with Fast Page Mode
2M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V
The Samsung KMM5322200C2W is a 2Mx32bits Dynamic
RAM high density memory module. The Samsung
KMM5322200C2W consists of four CMOS 1Mx16bits DRAMs
in 42-pin SOJ packages mounted on a 72-pin glass-epoxy
substrate. A 0.1 or 0.22uF decoupling capacitor is mounted
on the printed circuit board for each DRAM. The
KMM5322200C2W is a Single In-line Memory Module with
edge connections and is intended for mounting into 72 pin
edge connector sockets.
PERFORMANCE RANGE
Part Identification
- KMM5322200C2W(1024 cycles/16ms Ref, SOJ, Solder)
- KMM5322200C2WG(1024 cycles/16ms Ref, SOJ, Gold)
Fast Page Mode Operation
CAS-before-RAS refresh capability
RAS-only refresh capability
TTL compatible inputs and outputs
Single +5V
±
10% power supply
JEDEC standard PDPin & pinout
PCB : Height(750mil), double sided component
GENERAL DESCRIPTION
FEATURES
Speed
t
RAC
t
CAC
t
RC
-5
50ns
15ns
90ns
-6
60ns
15ns
110ns
PIN NAMES
Pin Name
Function
A0 - A9
Address Inputs
DQ0 - DQ31
Data In/Out
W
Read/Write Enable
RAS0 , RAS1
Row Address Strobe
CAS0 - CAS3
Column Address Strobe
PD1 -PD4
Presence Detect
Vcc
Power(+5V)
Vss
Ground
NC
No Connection
Res
Reserved Pin
PRESENCE DETECT PINS (Optional)
* Pin connection changing available
Pin
50NS
60NS
PD1
PD2
PD3
PD4
NC
NC
Vss
Vss
NC
NC
NC
NC
PIN CONFIGURATIONS
Pin
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
Symbol
V
SS
DQ0
DQ16
DQ1
DQ17
DQ2
DQ18
DQ3
DQ19
Vcc
NC
A0
A1
A2
A3
A4
A5
A6
Res(A10)
DQ4
DQ20
DQ5
DQ21
DQ6
DQ22
DQ7
DQ23
A7
Res(A11)
Vcc
A8
A9
RAS1
RAS0
NC
NC
Pin
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
Symbol
NC
NC
Vss
CAS0
CAS2
CAS3
CAS1
RAS0
RAS1
NC
W
NC
DQ8
DQ24
DQ9
DQ25
DQ10
DQ26
DQ11
DQ27
DQ12
DQ28
Vcc
DQ29
DQ13
DQ30
DQ14
DQ31
DQ15
NC
PD1
PD2
PD3
PD4
NC
Vss
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to
change products and specifications without notice.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KMM5322204C2W | 2M x 32 DRAM SIMM using 1Mx16 , 1K Refresh, 5V |
| KMM5322204C2WG | 2M x 32 DRAM SIMM using 1Mx16 , 1K Refresh, 5V |
| KMM53232000BK | 32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V |
| KMM53232000CK | 32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V |
| KMM53232000BKG | 32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KMM5322204C2W | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 DRAM SIMM using 1Mx16 , 1K Refresh, 5V |
| KMM5322204C2WG | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 DRAM SIMM using 1Mx16 , 1K Refresh, 5V |
| KMM532256CV-08 | 制造商:Samsung Semiconductor 功能描述: |
| KMM53232000BK | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V |
| KMM53232000BKG | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V |
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