參數(shù)資料
型號: KMM5324004BSW
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 4M x 32 DRAM SIMM(4M x 32 動態(tài) RAM模塊)
中文描述: 4米× 32的DRAM上海藥物研究所(4米× 32動態(tài)內(nèi)存模塊)
文件頁數(shù): 17/19頁
文件大?。?/td> 381K
代理商: KMM5324004BSW
DRAM MODULE
KMM5324004BSW/BSWG
CAS-BEFORE-RAS REFRESH COUNTER TEST CYCLE
RAS
V
IH
-
V
IL
-
CAS
V
IH
-
V
IL
-
A
V
IH
-
V
IL
-
COLUMN
ADDRESS
t
RAS
t
RSH
t
CHR
t
RAL
t
CSR
t
CPT
t
RP
t
CAS
t
ASC
t
CAH
READ CYCLE
V
OH
-
V
OL
-
DATA-OUT
DQ
t
REZ
t
CLZ
WRITE CYCLE
V
IH
-
V
IL
-
DATA-IN
DQ
t
DH
t
DS
W
V
IH
-
V
IL
-
t
WP
t
CWD
t
CWL
t
RWL
READ-MODIFY-WRITE
t
AWD
V
IH
-
V
IL
-
OE
t
OEA
t
AA
t
CAC
t
DS
t
DH
VALID
DATA-OUT
V
I/OH
-
V
I/OL
-
DQ
Don
t care
Undefined
V
IH
-
V
IL
-
OE
t
OEA
t
OEZ
OE
V
IH
-
V
IL
-
t
RCS
t
CLZ
t
OEZ
t
OED
t
WRP
t
WRH
t
RRH
t
RCH
t
RCS
t
CAC
t
AA
V
IH
-
V
IL
-
W
t
WRP
t
WRH
t
WCS
t
WCH
t
CWL
V
IH
-
V
IL
-
W
t
WP
t
RWL
t
WRP
t
WRH
VALID
DATA-IN
NOTE : This timing diagram is applied to all devices besides 64M DRAM based modules.
t
CEZ
t
WEZ
相關(guān)PDF資料
PDF描述
KMM5328004BSW 8M x 32 DRAM SIMM(8M x 32 動態(tài) RAM模塊)
KMM5361203C2WG 1M x 36 DRAM SIMM using 1Mx16 and 1Mx4 Quad CAS, 1K Refresh
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KMM5324004BSWG 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V
KMM5324004CK 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V
KMM5324004CKG 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V
KMM5324004CSW 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V
KMM5324004CSWG 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V