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參數(shù)資料
| 型號： | KMM5364005BSWG |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V |
| 中文描述： | 4米× 36的DRAM上海藥物研究所使用4Mx16 |
| 文件頁數(shù)： | 14/19頁 |
| 文件大?。?/td> | 393K |
| 代理商： | KMM5364005BSWG |
DRAM MODULE
KMM5364005BSW/BSWG
Don
′
t care
RAS - ONLY REFRESH CYCLE*
NOTE : W, OE, D
IN
= Don
′
t care
Undefined
D
OUT
= OPEN
RAS
V
IH
-
V
IL
-
CAS
V
IH
-
V
IL
-
A
V
IH
-
V
IL
-
ROW
ADDR
t
RC
t
RP
t
ASR
t
CRP
t
RAS
t
RAH
t
RPC
t
CRP
OPEN
CAS - BEFORE - RAS REFRESH CYCLE
NOTE : OE , A = Don
′
t care
RAS
V
IH
-
V
IL
-
CAS
V
IH
-
V
IL
-
t
RC
t
RP
t
RAS
t
RPC
t
CP
t
RPC
t
CSR
t
CHR
t
CEZ
V
OH
-
V
OL
-
DQ
t
WRP
t
WRH
W
V
IH
-
V
IL
-
t
RP
* In RAS-only refresh cycle of 64Mb A-dile & B-die, when CAS signal transits from Low to High, the valid data may be cut off.
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| KMM5364005CSWG | 4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V |
| KMM5364005CK | 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K, Refresh, 5V |
| KMM5364005CSW | 4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V |
| KMM5364005CKG | 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K, Refresh, 5V |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KMM5364005CK | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K, Refresh, 5V |
| KMM5364005CKG | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K, Refresh, 5V |
| KMM5364005CSW | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V |
| KMM5364005CSWG | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V |
| KMM5364103CK | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V |
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