參數(shù)資料
型號(hào): KMM5364005CK
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K, Refresh, 5V
中文描述: 4米× 36的DRAM上海藥物研究所利用4Mx4和16M四中科院,4K/2K,刷新,5V的
文件頁(yè)數(shù): 10/19頁(yè)
文件大?。?/td> 393K
代理商: KMM5364005CK
DRAM MODULE
KMM5364005BSW/BSWG
t
DOH
HYPER PAGE READ CYCLE
RAS
V
IH
-
V
IL
-
CAS
V
IH
-
V
IL
-
A
V
IH
-
V
IL
-
W
V
IH
-
V
IL
-
OE
V
IH
-
V
IL
-
COLUMN
ADDRESS
ROW
ADDR
t
RASP
t
RP
t
RCD
t
ASR
t
CRP
Don
t care
Undefined
V
OH
-
V
OL
-
DQ
t
OEP
COLUMN
ADDRESS
t
CAS
t
CAS
t
CAS
t
CAS
t
CP
t
CP
t
CP
t
HPC
t
HPC
t
HPC
t
RHCP
t
CSH
t
RAD
t
RAH
t
ASC
t
CAH
t
CAH
t
CAH
t
ASC
t
CAH
t
RCS
t
AA
t
RCH
t
ASC
COLUMN
ADDRESS
COLUMN
ADDR
VALID
DATA-OUT
t
OEZ
t
OEA
t
OEP
t
AA
t
CAC
t
OEA
t
AA
t
CPA
t
CAC
t
CPA
VALID
DATA-OUT
t
OLZ
VALID
DATA-OUT
t
OEZ
t
CLZ
t
RAC
t
OEA
t
CAC
t
RRH
t
CHO
t
REZ
t
OEZ
t
CAC
t
OCH
t
CPA
t
CAC
t
AA
VALID
DATA-OUT
ó
t
ASC
相關(guān)PDF資料
PDF描述
KMM5364005CSW 4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
KMM5364005CKG 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K, Refresh, 5V
KMM5364105CK 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K, Refresh, 5V
KMM5364105CKG 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K, Refresh, 5V
KMM965G112 1Mx64 SGRAM SODIMM(1Mx64 圖形RAM模塊)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KMM5364005CKG 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K, Refresh, 5V
KMM5364005CSW 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
KMM5364005CSWG 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
KMM5364103CK 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V
KMM5364103CKG 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V