參數(shù)資料
型號: KMM5364005CK
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K, Refresh, 5V
中文描述: 4米× 36的DRAM上海藥物研究所利用4Mx4和16M四中科院,4K/2K,刷新,5V的
文件頁數(shù): 17/19頁
文件大?。?/td> 393K
代理商: KMM5364005CK
DRAM MODULE
KMM5364005BSW/BSWG
CAS-BEFORE-RAS REFRESH COUNTER TEST CYCLE
RAS
V
IH
-
V
IL
-
CAS
V
IH
-
V
IL
-
A
V
IH
-
V
IL
-
COLUMN
ADDRESS
t
RAS
t
RSH
t
CHR
t
RAL
t
CSR
t
CPT
t
RP
t
CAS
t
ASC
t
CAH
READ CYCLE
V
OH
-
V
OL
-
DATA-OUT
DQ
t
REZ
t
CLZ
WRITE CYCLE
V
IH
-
V
IL
-
DATA-IN
DQ
t
DH
t
DS
W
V
IH
-
V
IL
-
t
WP
t
CWD
t
CWL
t
RWL
READ-MODIFY-WRITE
t
AWD
V
IH
-
V
IL
-
OE
t
OEA
t
AA
t
CAC
t
DS
t
DH
VALID
DATA-OUT
V
I/OH
-
V
I/OL
-
DQ
Don
t care
Undefined
V
IH
-
V
IL
-
OE
t
OEA
t
OEZ
OE
V
IH
-
V
IL
-
t
RCS
t
CLZ
t
OEZ
t
OED
t
WRP
t
WRH
t
RRH
t
RCH
t
RCS
t
CAC
t
AA
V
IH
-
V
IL
-
W
t
WRP
t
WRH
t
WCS
t
WCH
t
CWL
V
IH
-
V
IL
-
W
t
WP
t
RWL
t
WRP
t
WRH
VALID
DATA-IN
NOTE : This timing diagram is applied to all devices besides 64M DRAM based modules.
t
CEZ
t
WEZ
相關PDF資料
PDF描述
KMM5364005CSW 4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
KMM5364005CKG 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K, Refresh, 5V
KMM5364105CK 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K, Refresh, 5V
KMM5364105CKG 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K, Refresh, 5V
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相關代理商/技術參數(shù)
參數(shù)描述
KMM5364005CKG 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K, Refresh, 5V
KMM5364005CSW 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
KMM5364005CSWG 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
KMM5364103CK 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V
KMM5364103CKG 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V