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參數(shù)資料
| 型號(hào)： | KMM5364005CKG |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K, Refresh, 5V |
| 中文描述： | 4米× 36的DRAM上海藥物研究所利用4Mx4和16M四中科院，4K/2K，刷新，5V的 |
| 文件頁數(shù)： | 19/19頁 |
| 文件大?。?/td> | 393K |
| 代理商： | KMM5364005CKG |
DRAM MODULE
KMM5364005BSW/BSWG
PACKAGE DIMENSIONS
.133(3.38)
4.250(107.95)
3.984(101.19)
R.062
±
.004(R1.57
±
.10)
.250(6.35)
3.750(95.25)
.250(6.35)
Units : Inches (millimeters)
0.125MIN
(3.20MIN)
.100(2.54)
MAX
.054(1.37)
.047(1.19)
Tolerances :
±
.005(.13) unless otherwise specified
NOTE : The used device is 4Mx16 & Quad CAS 4Mx4 DRAM, TSOPII
DRAM Part No. : KMM5364005BSW/BSWG -- KM416C4104BS & KM44C4005CS(300 mil)
1.000(31.75)
.400(10.16)
.125 DIA
±
.002(3.18
±
.051)
R.062(1.57)
.250(6.35)
.080(2.03)
( Back view )
( Front view )
Gold/Solder Plating Lead
.010(.25)MAX
.050(1.27)
.041
±
.004(1.04
±
.10)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KMM5364005CSW | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V |
| KMM5364005CSWG | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V |
| KMM5364103CK | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V |
| KMM5364103CKG | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V |
| KMM5364105CK | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K, Refresh, 5V |
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