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參數(shù)資料
| 型號： | KMM5364105CK |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K, Refresh, 5V |
| 中文描述： | 4米× 36的DRAM上海藥物研究所利用4Mx4和16M四中科院，4K/2K，刷新，5V的 |
| 文件頁數(shù)： | 3/15頁 |
| 文件大?。?/td> | 277K |
| 代理商： | KMM5364105CK |
DRAM MODULE
KMM5364105CK/CKG
KMM5364005CK/CKG
I
CC1
, I
CC3
, I
CC4
and I
CC6
are dependent on output loading and cycle rates. Specified values are obtained with the output open.
I
CC
is specified as an average current. In I
CC1
and I
CC3
, address can be changed maximum once while RAS=V
IL
. In I
CC4
,
address can be changed maximum once within one EDO mode cycle,
t
HPC
.
* NOTE
:
ABSOLUTE MAXIMUM RATINGS *
* Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to
the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for intended
periods may affect device reliability.
Item
Symbol
V
IN
, V
OUT
V
CC
T
stg
P
d
OS
Rating
-1 to +7.0
-1 to +7.0
-55 to +150
9
50
Unit
V
V
°
C
W
mA
Voltage on any pin relative to V
SS
Voltage on V
CC
supply relative to V
SS
Storage Temperature
Power Dissipation
Short Circuit Output Current
RECOMMENDED OPERATING CONDITIONS
(Voltage referenced to V
SS
, T
A
= 0 to 70
°
C)
*1 : V
CC
+2.0V/20ns, Pulse width is measured at V
CC
.
*2 : -2.0V/20ns, Pulse width is measured at V
SS
.
Item
Symbol
Min
4.5
0
2.4
-1.0
*2
Typ
Max
5.5
0
V
CC
+1
*1
0.8
Unit
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
V
CC
V
SS
V
IH
V
IL
5.0
0
-
-
V
V
V
V
DC AND OPERATING CHARACTERISTICS
(Recommended operating conditions unless otherwise noted)
I
CC1
I
CC2
I
CC3
I
CC4
I
CC5
I
CC6
I
I(L)
I
O(L)
V
OH
V
OL
Symbol
Speed
KMM5364005CK/CKG
Min
KMM5364105CK/CKG
Min
Unit
Max
810
720
18
810
720
720
630
9
810
720
45
5
-
0.4
Max
990
900
18
990
900
810
720
9
990
900
45
5
-
0.4
I
CC1
-5
-6
-
-
-
-
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
uA
uA
V
V
I
CC2
I
CC3
Don't care
-5
-6
-5
-6
Don't care
-5
-6
-
-
-
-
-
-
-
-
-
-
-
I
CC4
-
-
I
CC5
I
CC6
-
-
-
I
I(L)
I
O(L)
V
OH
V
OL
Don't care
-45
-5
2.4
-
-45
-5
2.4
-
Don't care
: Operating Current * (RAS, CAS, Address cycling @
t
RC
=min)
: Standby Current (RAS=CAS=W=V
IH
)
: RAS Only Refresh Current * (CAS=V
IH
, RAS cycling @
t
RC
=min)
: EDO Mode Current * (RAS=V
IL
, CAS Address cycling :
t
HPC
=min)
: Standby Current (RAS=CAS=W=Vcc-0.2V)
: CAS-Before-RAS Refresh Current * (RAS and CAS cycling @
t
RC
=min)
: Input Leakage Current (Any input 0
≤
V
IN
≤
Vcc+0.5V, all other pins not under test=0 V)
: Output Leakage Current(Data Out is disabled, 0V
≤
V
OUT
≤
Vcc)
: Output High Voltage Level (I
OH
= -5mA)
: Output Low Voltage Level (I
OL
= 4.2mA)
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| KMM5364105CKG | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K, Refresh, 5V |
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| KMM5368003BSWG | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V |
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