參數(shù)資料
型號: KS57C5312
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: The KS57C5204/C5208/C5304/C5308/C5312 single-chip CMOS microcontroller has been designed for highperformance using SAM 47 Samsung Arrangeable Microcon
中文描述: 在KS57C5204/C5208/C5304/C5308/C5312單芯片CMOS微控制器是專為使用SAM 47型高性能三星Arrangeable Microcon
文件頁數(shù): 33/40頁
文件大?。?/td> 283K
代理商: KS57C5312
KS57C5204/C5208/P5208/C5304/C5308/P5308/C5312/P5312
KS57P5208/P5308/P5312 OTP
15-5
Table 15-3. Comparison of KS57P5208 and KS57C5208 Features
Characteristic
KS57P5208
KS57C5208
Program Memory
Operating Voltage (V
DD
)
8 K byte EPROM
8 K byte mask ROM
1.8 V (3 MHz) to 5.5 V
1.8 V (3 MHz) to 5.5 V
OTP Programming Mode
V
DD
= 5 V, V
PP
(TEST) = 12.5 V
Pin Configuration
42 SDIP / 44 QFP
42 SDIP / 44 QFP
EPROM Programmability
User Program 1 time
Programmed at the factory
Table 15-4. Comparison of KS57P5308/P5312 and KS57C5308/C5312 Features
Characteristic
KS57P5308/P5312
KS57C5308/C5312
Program Memory
Operating Voltage (V
DD
)
8 K byte EPROM / 12 K (P5312)
8 K byte mask ROM / 12 K (C5312)
1.8 V (3 MHz) to 5.5 V
1.8 V (3 MHz) to 5.5 V
OTP Programming Mode
V
DD
= 5 V, V
PP
(TEST) = 12.5 V
Pin Configuration
30 SOP / 32 SOP
30 SOP / 32 SOP
EPROM Programmability
User Program 1 time
Programmed at the factory
OPERATING MODE CHARACTERISTICS
When 12.5 V is supplied to the Vpp(TEST) pin of the KS57P5208/P5308/P5312, the EPROM programming mode
is entered. The operating mode (read, write, or read protection) is selected according to the input signals to the
pins listed in Table 15-3 below.
Table 15-5. Operating Mode Selection Criteria
V
DD
Vpp
(TEST)
REG/
MEM
Address
(A15-A0)
R/
W
Mode
5 V
5 V
0
0000H
1
EPROM read
12.5V
0
0000H
0
EPROM program
12.5V
0
0000H
1
EPROM verify
12.5V
1
0E3FH
0
EPROM read protection
NOTE:
"0" means Low level; "1" means High level.
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