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參數(shù)資料
| 型號： | KSC5504D |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | High Voltage High Speed Power Switch Application |
| 中文描述： | 4 A, 600 V, NPN, Si, POWER TRANSISTOR, TO-220 |
| 封裝： | TO-220, 3 PIN |
| 文件頁數(shù)： | 5/10頁 |
| 文件大小： | 104K |
| 代理商： | KSC5504D |
2001 Fairchild Semiconductor Corporation
K
Rev. A1, June 2001
Typical Characteristics
(Continued)
Figure 7. Base-Emitter Saturation Voltage
Figure 8. Diode Forward Voltage
Figure 9. Collector Output Capacitance
Figure 10. Inductive Switching Time, t
si
Figure 11. Inductive Switching Time, t
fi
Figure 12. Inductive Switching Time, t
c
1m
10m
100m
1
0.1
1
10
I
C
[A] , COLLECTOR CURRENT
T
j
= 125
o
C
T
j
= 25
o
C
I
C
= 5 I
B
V
B
[
1m
10m
100m
1
0.1
1
10
I
C
[A] , COLLECTOR CURRENT
T
j
= 125
o
C
T
j
= 25
o
C
V
F
1
10
100
10
100
1k
10k
C
ob
C
ib
f = 1 MHz
C
REVERSE VOLTAGE [V]
1
1
10
I
C
= 5 I
= 5 I
B2
V
CC
= 15 V
V
Z
= 300 V
L
C
= 200 uH
0.5
3
5
T
j
= 25
o
C
T
j
= 125
o
C
t
S
[
I
C
[A], COLLECTOR CURRENT
1
100
1000
I
C
= 5 I
= 5 I
B2
V
CC
= 15 V
V
Z
= 300 V
L
C
= 200 uH
T
j
= 25
o
C
T
j
= 125
o
C
500
3
0.5
t
F
[
I
C
[A] , COLLECTOR CURRENT
1
100
1000
I
C
= 5 I
= 5 I
B2
V
CC
= 15 V
V
Z
= 300 V
L
C
= 200 uH
T
j
= 25
o
C
T
j
= 125
o
C
3
0.5
3000
t
S
[
I
C
[A] , COLLECTOR CURRENT
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KSC5504DT | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:High Voltage High Speed Power Switch Application |
| KSC5504DTM | 功能描述:兩極晶體管 - BJT NPN HI-VOLT HI-SPEED D2PAK RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| KSC5504DTTU | 功能描述:兩極晶體管 - BJT NPN HI-VOLT HI-SPEED RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| KSC5603D | 功能描述:兩極晶體管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| KSC5603D_10 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:NPN Silicon Transistor, Planar Silicon Transistor |
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