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參數(shù)資料
| 型號： | KSC5504D |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | High Voltage High Speed Power Switch Application |
| 中文描述： | 4 A, 600 V, NPN, Si, POWER TRANSISTOR, TO-220 |
| 封裝： | TO-220, 3 PIN |
| 文件頁數(shù)： | 7/10頁 |
| 文件大?。?/td> | 104K |
| 代理商： | KSC5504D |
2001 Fairchild Semiconductor Corporation
K
Rev. A1, June 2001
Typical Characteristics
(Continued)
Figure 19. Resistive Switching Time, t
on
Figure 20. Resistive Switching Time, t
si
Figure 21. Resistive Switching Time, t
fi
Figure 22. Inductive Switching Time, t
si
Figure 23. Inductive Switching Time, t
fi
Figure 24. Inductive Switching Time, t
c
1
100
I
C
= 5 I
= 2 I
B2
V
= 300 V
PW = 40 us
T
j
= 25
o
C
T
j
= 125
o
C
3
0.5
500
t
O
[
I
C
[A], COLLECTOR CURRENT
1
1
I
C
= 5 I
= 2 I
B2
V
= 300 V
PW = 40 us
T
j
= 25
o
C
T
j
= 125
o
C
3
0.5
5
t
S
[
I
C
[A], COLLECTOR CURRENT
1
100
I
C
= 5 I
= 2 I
B2
V
= 300 V
PW = 40 us
T
j
= 25
o
C
T
j
= 125
o
C
3
0.5
500
t
F
[
I
C
[A], COLLECTOR CURRENT
5
10
0
2
4
6
8
I
C
= 2 A , T
j
= 25
o
C
I
C
= 1 A , T
j
= 125
o
C
I
C
= 1 A , T
j
= 25
o
C
I
C
= 2 A , T
j
= 125
o
C
I
B1
= I
V
CC
= 15 V
V
Z
= 300 V
L
C
= 200 uH
11
1
t
S
[
h
FE
, FORCED GAIN
5
10
0
200
400
600
800
1000
1200
1400
11
1
I
C
= 1 A , T
j
= 125
o
C
I
C
= 1 A , T
j
= 25
o
C
I
C
= 2 A , T
j
= 25
o
C
I
C
= 2 A , T
j
= 125
o
C
I
B1
= I
V
CC
= 15 V
V
Z
= 300 V
L
C
= 200 uH
t
F
[
h
FE
, Forced Gain
5
10
0
500
1000
1500
2000
2500
11
1
I
B1
= I
V
CC
= 15 V
V
Z
= 300 V
L
C
= 200 uH
I
C
= 1 A , T
j
= 25
o
C
I
C
= 1 A , T
j
= 125
o
C
I
C
= 2 A , T
j
= 25
o
C
I
C
= 2 A , T
j
= 125
o
C
t
C
[
h
FE
, Forced Gain
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KSC5504DT | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:High Voltage High Speed Power Switch Application |
| KSC5504DTM | 功能描述:兩極晶體管 - BJT NPN HI-VOLT HI-SPEED D2PAK RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| KSC5504DTTU | 功能描述:兩極晶體管 - BJT NPN HI-VOLT HI-SPEED RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| KSC5603D | 功能描述:兩極晶體管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| KSC5603D_10 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:NPN Silicon Transistor, Planar Silicon Transistor |
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