參數(shù)資料
型號: KSC5504DT
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 功率晶體管
英文描述: High Voltage High Speed Power Switch Application
中文描述: 4 A, 600 V, NPN, Si, POWER TRANSISTOR, TO-263
封裝: D2PAK-3
文件頁數(shù): 4/10頁
文件大?。?/td> 104K
代理商: KSC5504DT
2001 Fairchild Semiconductor Corporation
K
Rev. A1, June 2001
Typical Characteristics
Figure 1. Static Characteristic
Figure 2. DC current Gain
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Collector-Emitter Saturation Voltage
Figure 5. Typical Collector Saturation Voltage
Figure 6. Base-Emitter Saturation Voltage
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
I
B
= 1.8 A
I
B
= 1.6 A
I
B
=1.4 A
I
B
=1.2 A
I
B
=1 A
I
B
= 2 A
I
B
= 800 mA
I
B
= 600 mA
I
B
= 400 mA
I
B
= 200 mA
I
C
V
CE
[v] , COLLECTOR EMITTER VOLTAGE
1m
10m
100m
1
1
10
100
V
CE
= 1 V
T
j
= 25
o
C
T
j
= 125
o
C
h
F
I
C
[A] , COLLECTOR CURRENT
1m
10m
100m
1
0.1
1
10
I
C
[A] , COLLECTOR CURRENT
I
C
= 5 I
B
T
j
= 25
o
C
T
j
= 125
o
C
V
C
[
1m
10m
100m
1
0.1
1
10
I
C
[A] , CO LLECTOR CURRENT
I
C
= 10 I
B
T
j
= 125
o
C
T
j
= 25
o
C
V
C
1E-3
0.01
0.1
1
0.0
0.5
1.0
1.5
2.0
I
C
=0.1 A
I
C
=1.0 A
I
C
=0.5 A
I
C
=1.5 A
I
C
=2.0 A
T
j
=25
o
C
V
C
[
I
B
[A], BASE CURRENT
1m
10m
100m
1
0.1
1
10
I
C
[A] , COLLECTOR CURRENT
V
B
[
T
j
= 125
o
C
T
j
= 25
o
C
I
C
= 10 I
B
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