參數(shù)資料
型號(hào): KSH44H11
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi): 功率晶體管
英文描述: General Purpose Power and Switching Such as Output or Driver Stages in Applications D-PAK for Surface Mount Applications
中文描述: 8 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-252
封裝: DPAK-3
文件頁(yè)數(shù): 2/5頁(yè)
文件大?。?/td> 42K
代理商: KSH44H11
2002 Fairchild Semiconductor Corporation
K
Rev. A3, October 2002
Typical Characteristics
Figure 1. DC current Gain
Figure 2. Safe Operating Area
Figure 3. Power Derating
0.01
0.1
1
10
1
10
100
1000
V
CE
= 1V
h
F
,
I
C
[A], COLLECTOR CURRENT
1
10
100
1000
0.01
0.1
1
10
100
5ms
DC
100
μ
s
500
μ
s
1ms
I
CP
(max)
I
C
(max)
I
C
[
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0
25
50
75
100
125
150
175
0
5
10
15
20
25
P
C
[
T
C
[
o
C], CASE TEMPERATURE
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KSH44H11I 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:General Purpose Power and Switching Such as Output or Driver Stages in Applications D-PAK for Surface Mount Applications
KSH44H11-I 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:General Purpose Power and Switching Such as Output or Driver Stages in Applications D-PAK for Surface Mount Applications
KSH44H11ITU 功能描述:兩極晶體管 - BJT NPN/80V/8A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
KSH44H11TF 功能描述:兩極晶體管 - BJT NPN Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
KSH44H11TM 功能描述:兩極晶體管 - BJT NPN Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2