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參數(shù)資料
| 型號： | KSP10 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | VHF/UHF transistor |
| 中文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 51K |
| 代理商： | KSP10 |
2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
K
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25
°
C
unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
P
C
Collector Power Dissipation (T
a
=25
°
C)
Derate above 25
°
C
P
C
Derate above 25
°
C
T
J
Junction Temperature
T
STG
Storage Temperature
Rth(j-c)
Thermal Resistance, Junction to Case
Rth(j-a)
Thermal Resistance, Junction to Ambient
Electrical Characteristics
T
a
=25
°
C
unless otherwise noted
Symbol
Parameter
BV
CBO
Collector-Base Breakdown Voltage
BV
CEO
Collector-Emitter Breakdown Voltage
BV
EBO
Emitter-Base Breakdown Voltage
I
CBO
Collector Cut-off Current
I
EBO
Emitter Cut-off Current
h
FE
DC Current Gain
V
CE
(sat)
Collector-Emitter Saturation Voltage
V
BE
(on)
Base-Emitter On Voltage
f
T
Current Gain Bandwidth Product
C
ob
Output Capacitance
C
rb
Collector Base Feedback Capacitance
C
c·rbb′
Collector Base Time Constant
* Pulse Test: PW
≤
300
μ
s, Duty Cycle
≤
2%
Parameter
Value
30
25
3.0
350
2.8
1.0
8.0
150
-55~150
125
357
Units
V
V
V
mW
mW/
°
C
W
W/
°
C
°
C
°
C
°
C/W
°
C/W
Collector Power Dissipation (T
C
=25
°
C)
Test Condition
I
C
=100
μ
A, I
E
=0
I
C
=1mA, I
B
=0
I
E
=10
μ
A, I
C
=0
V
CB
=25V, I
E
=0
V
EB
=2V, I
C
=0
V
CE
=10V, I
C
=4mA
I
C
=4mA, I
B
=0.4mA
V
CE
=10V, I
C
=4mA
V
CE
=10V, I
C
=4mA, f=100MHz
V
CB
=10V, I
E
=0, f=1MHz
V
CB
=10V, I
E
=0, f=1MHz
V
CB
=10V, I
C
=4mA,
f=31.8MHz
Min.
30
25
3.0
Max.
Units
V
V
V
nA
nA
100
100
60
0.5
0.95
V
V
650
MHz
pF
pF
ps
0.7
0.65
9.0
0.35
KSP10
VHF/UHF transistor
1. Base 2. Emitter 3. Collector
TO-92
1
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| KSP102 | 制造商:OTAX Corporation 功能描述:10 sAm` P/C` Tube |
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| KSP10BU | 功能描述:兩極晶體管 - BJT NPN Si Transistor Epitaxial RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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| KSP10L | 制造商:OTAX 制造商全稱:OTAX 功能描述:DIP Switch |
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