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參數(shù)資料
| 型號： | KTB1124 |
| 廠商： | KEC Holdings |
| 英文描述： | EPITAXIAL PLANAR PNP TRANSISTOR (VOLTAGE REGULATOR RELAY LAMP DRIVER, ELECTRICAL EQUIPMENT) |
| 中文描述： | 外延平面PNP晶體管（調(diào)壓器繼電器燈驅(qū)動器，電氣設(shè)備） |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 88K |
| 代理商： | KTB1124 |
2001. 12. 6
1/3
SEMICONDUCTOR
TECHNICAL DATA
KTB1124
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 3
VOLTAGE REGULATORS, RELAY DRIVERS
LAMP DRIVERS, ELECTRICAL EQUIPMENT
FEATURES
Adoption of MBIT processes.
Low collector-to-emitter saturation voltage.
Fast switching speed.
Large current capacity and wide ASO.
Complementary to KTD1624.
MAXIMUM RATING (Ta=25
)
DIM
A
B
C
D
E
F
G
H
J
K
4.70 MAX
2.50+
1.70 MAX
0.45+0.15/-0.10
4.25 MAX
1.50 0.10
0.40 TYP
1.75 MAX
0.75 MIN
0.5+0.10/-0.05
SOT-89
G
D
1
2
3
2. COLLECTOR (HEAT SINK)
A
C
K
J
MILLIMETERS
H
1. BASE
3. EMITTER
B
E
F
F
D
+
ELECTRICAL CHARACTERISTICS (Ta=25
)
Note : h
FE
(1) Classification A:100
200, B:140
280, C:200
400
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-60
V
Vollector-Emitter Voltage
V
CEO
-50
V
Emitter-Base Voltage
V
EBO
-6
V
Collector Current
I
C
-3
A
Collector Current(Pulse)
I
CP
-6
A
Collector Power Dissipation
P
C
500
mW
P
C
*
1
W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55
150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT.
Collector Cut-off Current
I
CBO
V
CB
=-40V, I
E
=0
-
-
-1
Emitter Cut-off Current
I
EBO
V
EB
=-4V, I
C
=0
-
-
-1
DC Current Gain
h
FE
(1) (Note)
V
CE
=-2V, I
C
=-100
100
-
400
h
FE
(2)
V
CE
=-2V, I
C
=-3A
35
-
-
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=-2A, I
B
=-100
-
-0.35
-0.7
V
Base-Emitter Saturation Voltage
V
BE(sat)
I
C
=-2A, I
B
=-100
-
-0.94
-1.2
V
Transition Frequency
f
T
V
CE
=-10V, I
C
=-50
-
150
-
Collector Output Capacitance
C
ob
V
CB
=-10V, f=1
-
39
-
Switching
Time
Turn-on Time
t
on
IB2
470
25
5V
-25V
-10I 1=10I =I =1A
100
50
VR
I B1
PW=20
μ
s
DC 1%
<
R8
INPUT
-
70
-
nS
Storage Time
t
stg
-
450
-
Fall Time
t
f
-
35
-
* : Package mounted on ceramic substrate(250mm
2
0.8t)
X
Type Name
h Rank
Lot No.
Marking
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KTB1151 | EPITAXIAL PLANAR PNP TRANSISTOR (LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT) |
| KTB1234T | EPITAXIAL PLANAR PNP TRANSISTOR |
| KTB1241 | EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KTB1124_08 | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR PNP TRANSISTOR |
| KTB1151 | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR PNP TRANSISTOR (LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT) |
| KTB1234T | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR PNP TRANSISTOR |
| KTB1241 | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE) |
| KTB1260 | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE) |
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