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參數(shù)資料
| 型號(hào)： | KTB1234T |
| 廠商： | KEC Holdings |
| 英文描述： | EPITAXIAL PLANAR PNP TRANSISTOR |
| 中文描述： | 外延平面PNP晶體管 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 83K |
| 代理商： | KTB1234T |
2001. 10. 23
1/2
SEMICONDUCTOR
TECHNICAL DATA
KTB1234T
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 0
DRIVER APPLICATIONS.
FEATURES
AF amplifier, solenoid drivers, LED drivers.
Darlington connection.
High DC current gain.
Very small-sized package permitting sets to be made
smaller and slimer.
Complementary to KTD1854T.
MAXIMUM RATINGS (Ta=25
)
DIM
A
B
MILLIMETERS
2.9 0.2
1.6+0.2/-0.1
+
+
D
E
F
G
H
I
J
K
L
TSM
0.70 0.05
0.4 0.1
2.8+0.2/-0.3
1.9 0.2
0.95
0.16 0.05
0.00-0.10
0.25+0.25/-0.15
0.60
0.55
C
A
F
G
G
D
K
B
E
C
L
H
J
J
I
2
1
3
+
+
+
1. EMITTER
2. BASE
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=-60V, I
E
=0
-
-
-100
nA
Emitter Cut-off Current
I
EBO
V
EB
=-8V, I
C
=0
-
-
-100
nA
Collector-Base Breakdown Voltage
V
(BR)CBO
I
C
=-10
A, I
E
=0
-80
V
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=-1mA, I
B
=0
-50
V
Emitter-Base Breakdown Voltage
(BR)EBO
I
C
=-10
A, I
C
=0
-10
V
DC Current Gain
h
FE
1
V
CE
=-2V, I
C
=-10mA
5000
-
-
h
FE
2
V
CE
=-2V, I
C
=-100mA
3000
-
-
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=-100mA, I
B
=-100
A
-
-0.9
-1.5
V
Base-Emitter Saturation Voltage
V
BE(sat)
I
C
=-100mA, I
B
=-100
A
-
-1.5
-2.0
V
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-80
V
Collector-Emitter Voltage
V
CEO
-50
V
Emitter-Base Voltage
V
EBO
-10
V
Collector Current
DC
I
C
-200
mA
Pulse
I
CP
-400
Collector Power Dissipation
P
C
*
0.9
W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55
150
Type Name
Marking
Lot No.
S Y
COLLECTOR
BASE
EMITTER
EQUIVALENT CIRCUIT
* Package mounted on a ceramic board (600
0.8
)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KTB1241 | EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE) |
| KTB1260 | EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE) |
| KTB1366 | TRIPLE DIFFUSED PNP TRANSISTOR(GENERAL PURPOSE) |
| KTB1367 | TRIPLE DIFFUSED PNP TRANSISTOR(GENERAL PURPOSE) |
| KTB1368 | TRIPLE DIFFUSED PNP TRANSISTOR(GENERAL PURPOSE) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KTB1241 | 制造商:KEC 制造商全稱(chēng):KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE) |
| KTB1260 | 制造商:KEC 制造商全稱(chēng):KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE) |
| KTB1366 | 制造商:KEC 制造商全稱(chēng):KEC(Korea Electronics) 功能描述:TRIPLE DIFFUSED PNP TRANSISTOR(GENERAL PURPOSE) |
| KTB1367 | 制造商:KEC 制造商全稱(chēng):KEC(Korea Electronics) 功能描述:TRIPLE DIFFUSED PNP TRANSISTOR(GENERAL PURPOSE) |
| KTB1368 | 制造商:KEC 制造商全稱(chēng):KEC(Korea Electronics) 功能描述:TRIPLE DIFFUSED PNP TRANSISTOR(GENERAL PURPOSE) |
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