參數(shù)資料
型號(hào): KTB1234T
廠商: KEC Holdings
英文描述: EPITAXIAL PLANAR PNP TRANSISTOR
中文描述: 外延平面PNP晶體管
文件頁數(shù): 2/2頁
文件大?。?/td> 83K
代理商: KTB1234T
2001. 10. 23
2/2
KTB1234T
Revision No : 0
C
C
COLLECTOR-EMITTER VOLTAGE V (V)
0
0
I - V
CE
-1
-2
-3
-4
-5
-20
-40
-60
-80
-100
I =0
μ
A
-
A
-
A
-
A
-
A
-
A
-
A
-7
μ
A
C
C
BASE-EMITTER VOLTAGE V (V)
-0.6
0
I - V
BE
-0.8
-1.0
-1.2
-1.4
-1.8
-1.6
-40
-80
-120
-160
-200
V - I
C
B
B
V
D
F
COLLECTOR CURRENT I (mA)
C
h - I
COLLECTOR CURRENT I (mA)
V =-2V
V =-2V
C
-1
C
1K
COLLECTOR CURRENT I (mA)
-3
-100
-200
V - I
C
V
-10
-30
3K
5K
10K
30K
50K
100K
I /I =1000
I /I =1000
-0.5
-0.3
-50
-0.2
-3
-300
-100
-30
-10
-1
-0.5
-5
-300
-100
-30
-10
-50
-1
-3
Ta=-25 C
Ta=25 C
Ta=75 C
Ta=-25 C
Ta=25 C
Ta=75 C
Ta=75 C
Ta=25 C
Ta=-25 C
T7C
T2C
T-
C
C
P
AMBIENT TEMPERATURE Ta ( C)
0
0
Pc - Ta
20
40
60
80
100
120
140
160
0.2
0.4
0.6
0.8
1.0
1.2
1.4
MOUNTED ON A
CERAMIC BOARD
(600mm
`
0.8mm)
2
相關(guān)PDF資料
PDF描述
KTB1241 EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE)
KTB1260 EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE)
KTB1366 TRIPLE DIFFUSED PNP TRANSISTOR(GENERAL PURPOSE)
KTB1367 TRIPLE DIFFUSED PNP TRANSISTOR(GENERAL PURPOSE)
KTB1368 TRIPLE DIFFUSED PNP TRANSISTOR(GENERAL PURPOSE)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KTB1241 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE)
KTB1260 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE)
KTB1366 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:TRIPLE DIFFUSED PNP TRANSISTOR(GENERAL PURPOSE)
KTB1367 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:TRIPLE DIFFUSED PNP TRANSISTOR(GENERAL PURPOSE)
KTB1368 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:TRIPLE DIFFUSED PNP TRANSISTOR(GENERAL PURPOSE)