參數(shù)資料
型號(hào)： KTC3532T
廠商： KEC Holdings
英文描述： EPITAXIAL PLANAR NPN TRANSISTOR
中文描述： 外延平面NPN晶體管
文件頁(yè)數(shù)： 1/3頁(yè)
文件大?。?/td> 94K
代理商： KTC3532T
2001. 6. 26
1/3
SEMICONDUCTOR
TECHNICAL DATA
KTC3532T
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 0
RELAY DRIVERS, LAMP DRIVERS,
MOTOR DRIVERS APPLICATION.
FEATURES
Adoption of MBIT Processes.
Large Current Capacitance.
Low Collector-to-Emitter Saturation Voltage.
High-Speed Switching.
Ultrasmall Package Facilitates Miniaturization in end Products.
High Allowable Power Dissipation.
Complementary to KTA1532T
MAXIMUM RATING (Ta=25
)
DIM
A
B
MILLIMETERS
2.9 0.2
1.6+0.2/-0.1
+
+
D
E
F
G
H
I
J
K
L
TSM
0.70 0.05
0.4 0.1
2.8+0.2/-0.3
1.9 0.2
0.95
0.16 0.05
0.00-0.10
0.25+0.25/-0.15
0.60
0.55
C
A
F
G
G
D
K
B
E
C
L
H
J
J
I
2
1
3
+
+
+
1. EMITTER
2. BASE
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
20
V
Collector-Emitter Voltage
V
CEO
20
V
Emitter-Base Voltage
V
EBO
5
V
Collector Current
DC
I
C
1.5
A
Pulse
I
CP
3
A
Base Current
I
B
300
mA
Collector Power Dissipation
P
C
*
0.9
W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55
150
* Package mounted on a ceramic board (600
0.8
)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=12V, I
E
=0
-
-
0.1
A
Emitter Cut-off Current
I
EBO
V
EB
=4V, I
C
=0
-
-
0.1
A
Collector-Base Breakdown Voltage
V
(BR)CBO
I
C
=10
A, I
E
=0
I
C
=1mA, I
B
=0
20
-
-
V
Collector-Emitter Breakdown Voltage
V
(BR)CEO
20
-
-
V
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
=10
A, I
C
=0
I
C
=750mA, I
B
=15mA
5
-
-
V
Collector-Emitter Saturation Voltage
V
CE(sat)
-
130
200
mV
Base-Emitter Saturation Voltage
V
BE(sat)
I
C
=750mA, I
B
=15mA
-
0.85
1.2
V
DC Current Gain
h
FE
V
CE
=2V, I
C
=100mA
200
-
560
Transition Frequency
f
T
V
CE
=2V, I
C
=300mA
-
210
-
MHz
Collector Output Capacitance
C
ob
V
CB
=10V, f=1MHz
-
20
-
pF
Swiitching
Time
Turn-On Time
t
on
-
40
-
nS
Storage Time
t
stg
-
180
-
Fall Time
t
f
-
20
-
Type Name
Marking
Lot No.
H B
I
B1
B2
I
INPUT
OUTPUT
50
220
μ
F
PW=20
μ
s
DC 1%
470
μ
F
R
V
B
R
L
R
V =-5V
V =5V
20I =-20I =I =750mA
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