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參數(shù)資料
| 型號： | KTC802E |
| 廠商： | KEC Holdings |
| 英文描述： | EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, SWITCHING) |
| 中文描述： | 外延平面NPN晶體管（通用，開關） |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 74K |
| 代理商： | KTC802E |
2002. 2. 20
1/3
SEMICONDUCTOR
TECHNICAL DATA
KTC802E
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 1
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
High Current.
Low V
CE(sat)
.
: V
CE(sat)
250mV at I
C
=200mA/I
B
=10mA.
Complementary to KTA702E.
MAXIMUM RATINGS (Ta=25
)
DIM
A
A1
B
MILLIMETERS
1.6 0.05
1.0 0.05
1.6 0.05
1.2 0.05
0.50
0.2 0.05
0.5 0.05
0.12 0.05
5
B1
C
D
H
J
P
TES6
B1
B
D
A
A
C
C
J
H
1
2
3
6
4
P
P
5
+
+
+
+
+
+
+
1. Q EMITTER
2. Q BASE
3. Q COLLECTOR
4. Q EMITTER
5. Q BASE
6. Q COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
15
V
Collector-Emitter Voltage
V
CEO
12
V
Emitter-Base Voltage
V
EBO
6
V
Collector Current
I
C
500
mA
I
CP
(Note)
1
A
Collector Power Dissipation
P
C
*
200
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55
150
1
Q1
Q2
2
3
6
5
4
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=15V, I
E
=0
-
-
100
nA
Collector-Base Breakdown Voltage
V
(BR)CBO
I
C
=10
A
15
-
-
V
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=1mA
12
-
-
V
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
=10
A
6
-
-
V
DC Current Gain
h
FE
V
CE
=2V, I
C
=10mA
270
-
680
-
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=200mA, I
B
=10mA
-
90
250
mV
Transition Frequency
f
T
V
CE
=2V, I
C
=10mA, f
T
=100MHz
-
320
-
MHz
Collector Output Capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz
-
7.5
-
pF
Note : Single pulse Pw=1mS.
* Total Rating.
EQUIVALENT CIRCUIT (TOP VIEW)
L Z
Type Name
1
2
3
4
6
5
Marking
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相關代理商/技術參數(shù) |
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| KTC8050S | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR NPN TRANSISTOR |
| KTC811 | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, SWITCHING) |
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