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參數(shù)資料
| 型號： | KTC811U |
| 廠商： | KEC Holdings |
| 英文描述： | EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, SWITCHING) |
| 中文描述： | 外延平面NPN晶體管（通用，開關(guān)） |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 78K |
| 代理商： | KTC811U |
2001. 8. 6
1/3
SEMICONDUCTOR
TECHNICAL DATA
KTC811E
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 0
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
A super-minimold package houses 2 transistor.
High pairing property in h
FE
.
The follwing characteristics are common for Q
1
, Q
2
.
MAXIMUM RATING (Ta=25
)
DIM
A
A1
B
MILLIMETERS
1.6 0.05
1.0 0.05
1.6 0.05
1.2 0.05
0.50
0.2 0.05
0.5 0.05
0.12 0.05
5
B1
C
D
H
J
P
TES6
B1
B
D
A
A
C
C
J
H
1
2
3
6
4
P
P
5
+
+
+
+
+
+
+
1. Q EMITTER
2. Q EMITTER
3. Q BASE
4. Q COLLECTOR
5. Q BASE
6. Q COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
60
V
Collector-Emitter Voltage
V
CEO
50
V
Emitter-Base Voltage
V
EBO
5
V
Collector Current
I
C
150
mA
Base Current
I
B
30
mA
Collector Power Dissipation
P
C
*
200
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55
150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT.
Collector Cut-off Current
I
CBO
V
CB
=60V, I
E
=0
-
-
0.1
Emitter Cut-off Current
I
EBO
V
EB
=5V, I
C
=0
-
-
0.1
DC Current Gain
h
FE
(Note)
V
CE
=6V, I
C
=2
120
-
400
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=100
, I
B
=10
-
0.1
0.3
V
Transition Frequency
f
T
V
CE
=10V, I
C
=1
80
-
-
Collector Output Capacitance
C
ob
V
CB
=10V, I
E
=0, f=1
-
2
3.5
Noise Figure
NF
V
CE
=6V, I
C
=0.1
, f=1
, Rg=10
-
1.0
10
1
Q1
2
3
6
5
4
Q2
* Total Rating
Note : h
FE
Classification Y(4):120
240, GR(6):200
400
V
Type Name
h Rank
1
2
3
4
6
5
EQUIVALENT CIRCUIT (TOP VIEW)
Marking
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