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參數(shù)資料
| 型號(hào)： | KTD1624 |
| 廠商： | KEC Holdings |
| 英文描述： | EPITAXIAL PLANAR NPN TRANSISTOR |
| 中文描述： | 外延平面NPN晶體管 |
| 文件頁(yè)數(shù)： | 2/3頁(yè) |
| 文件大?。?/td> | 87K |
| 代理商： | KTD1624 |
2001. 12. 6
2/3
KTD1624
Revision No : 4
C
0
C
0
COLLECTOR-EMITTER VOLTAGE V (V)
CE
I - V
10
D
F
0.3
0.1
0.03
0.01
COLLECTOR CURRENT I (A)
h - I
COLLECTOR EMITTER VOLTAGE V (V)
0
2
4
6
0
C
0.4
0.8
1.2
1.6
2.0
1.0
2.0
3.0
4.0
5.0
I =0
C
1
3
10
30
50
100
300
500
1k
V =2V
8
10
12
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
5mA
10mA
20mA
40mA
60mA
100mA
C
0
0
0.8
1.6
C
2.4
3.2
BASE EMITTER VOLTAGE V (V)
0.4
I - V
BE
0.2
0.6
0.8
1.0
1.2
0.4
1.2
2.0
2.8
V =2V
T7C
2C
-
C
CE
I - V
14
16
18
20
2.0
0.01
V
10
100
30
50
500
300
C
1K
COLLECTOR CURRENT I (A)
0.1
0.03
0.3
1
3
10
V - I
C
I /I =20
C
80mA
I =0
1mA
2mA
3mA
4mA
5mA
6mA
7mA
8mA
Ta=75 C
Ta=-25 C
Ta=25 C
I /I =20
B
Ta=25 C
COLLECTOR CURRENT I (A)
0.01
0.03
V
0.1
0.3
0.5
B
1
3
5
3
10
1
0.3
0.1
Ta=75 C
Ta=-25 C
10
V - I
C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KTD1691 | EPITAXIAL PLANAR NPN TRANSISTOR (LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT) |
| KTD1824E | EPITAXIAL PLANAR NPN TRANSISTOR (FOR LOW-FREQUENCY AMPLIFICATION) |
| KTD1824 | EPITAXIAL PLANAR NPN TRANSISTOR (FOR LOW-FREQUENCY AMPLIFICATION) |
| KTD1854T | EPITAXIAL PLANAR NPN TRANSISTOR |
| KTD1863 | EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KTD1624_08 | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR NPN TRANSISTOR |
| KTD1691 | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR NPN TRANSISTOR (LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT) |
| KTD1824 | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR NPN TRANSISTOR (FOR LOW-FREQUENCY AMPLIFICATION) |
| KTD1824_08 | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:USM PACKAGE |
| KTD1824E | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR NPN TRANSISTOR (FOR LOW-FREQUENCY AMPLIFICATION) |
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