參數(shù)資料
型號(hào)： KTD1854T
廠(chǎng)商： KEC Holdings
英文描述： EPITAXIAL PLANAR NPN TRANSISTOR
中文描述： 外延平面NPN晶體管
文件頁(yè)數(shù)： 1/2頁(yè)
文件大小： 83K
代理商： KTD1854T
2001. 10. 23
1/2
SEMICONDUCTOR
TECHNICAL DATA
KTD1854T
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 0
DRIVER APPLICATIONS.
FEATURES
AF amplifier, solenoid drivers, LED drivers.
Darlington connection.
High DC current gain.
Very small-sized package permitting sets to be made
smaller and slimer.
Complementary to KTB1234T.
MAXIMUM RATINGS (Ta=25
)
DIM
A
B
MILLIMETERS
2.9 0.2
1.6+0.2/-0.1
+
+
D
E
F
G
H
I
J
K
L
TSM
0.70 0.05
0.4 0.1
2.8+0.2/-0.3
1.9 0.2
0.95
0.16 0.05
0.00-0.10
0.25+0.25/-0.15
0.60
0.55
C
A
F
G
G
D
K
B
E
C
L
H
J
J
I
2
1
3
+
+
+
1. EMITTER
2. BASE
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=60V, I
E
=0
-
-
100
nA
Emitter Cut-off Current
I
EBO
V
EB
=8V, I
C
=0
-
-
100
nA
Collector-Base Breakdown Voltage
V
(BR)CBO
I
C
=10
A, I
E
=0
80
V
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=1mA, I
B
=0
50
V
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
C
=10
A, I
C
=0
10
V
DC Current Gain
h
FE
1
V
CE
=2V, I
C
=10mA
5000
-
-
h
FE
2
V
CE
=2V, I
C
=100mA
4000
-
-
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=100mA, I
B
=100
A
-
0.9
1.5
V
Base-Emitter Saturation Voltage
V
BE(sat)
I
C
=100mA, I
B
=100
A
-
1.5
2.0
V
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
80
V
Collector-Emitter Voltage
V
CEO
50
V
Emitter-Base Voltage
V
EBO
10
V
Collector Current
DC
I
C
200
mA
Pulse
I
CP
400
Collector Power Dissipation
P
C
*
0.9
W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55
150
Type Name
Marking
Lot No.
L Y
COLLECTOR
BASE
EMITTER
EQUIVALENT CIRCUIT
* Package mounted on a ceramic board (600
0.8
)
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