參數(shù)資料
型號: KTH2369
廠商: KEC Holdings
英文描述: EPITAXIAL PLANAR NPN TRANSISTOR (HIGH SPEED SWITCHING)
中文描述: 外延平面NPN晶體管(高速開關(guān))
文件頁數(shù): 1/2頁
文件大小: 309K
代理商: KTH2369
2002. 6. 17
1/2
SEMICONDUCTOR
TECHNICAL DATA
KTH2369/A
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 2
HIGH SPEED SWITCHING APPLICATION.
FEATURES
High Frequency Characteristics
: f
T
=500MHz(Min.) (V
CE
=10V, f=100MHz, I
C
=10mA).
Excellent Switching Characteristics.
MAXIMUM RATING (Ta=25
)
TO-92
DIM
A
B
C
D
E
MILLIMETERS
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
14.00 0.50
0.55 MAX
2.30
0.45 MAX
1.00
F
G
H
J
K
L
M
N
D
1 2
3
B
A
J
K
G
H
F
F
L
C
E
C
M
N
1. COLLECTOR
2. BASE
3. EMITTER
+
ELECTRICAL CHARACTERISTICS (Ta=25
)
Note : *Pulse Test : Pulse Width
300 S, Duty Cycle
2.0%
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
40
V
Collector-Emitter Voltage
V
CEO
15
V
Emitter-Base Voltage
V
EBO
4.5
V
Collector Current
I
C
500
mA
Collector Power Dissipation (Ta=25
)
P
C
625
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55
150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=20V, I
E
=0
-
-
0.4
A
V
CB
=20V, I
E
=0, Ta=125
-
-
30
Collector-Base Breakdown Voltage
V
(BR)CBO
I
C
=10 A, I
E
=0
40
-
-
V
Collector-Emitter Breakdown Voltage *
V
(BR)CEO
I
E
=10mA, I
B
=0
15
-
-
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
=10 A, I
C
=0
4.5
-
-
DC Current *
Gain
KTH2369/A
h
FE
I
C
=10mA, V
CE
=1.0V
40
-
120
KTH2369
I
C
=10mA, V
CE
=1.0V, Ta=-55
20
-
-
KTH2369A
I
C
=10mA, V
CE
=0.35V, Ta=-55
20
-
-
KTH2369
I
C
=100mA, V
CE
=2.0V
20
-
-
KTH2369A
I
C
=100mA, V
CE
=1.0V
20
-
-
Collector-Emitter Saturation Voltage *
V
CE(sat)
I
C
=10mA, I
B
=1.0mA
-
-
0.25
V
Base-Emitter Saturation Voltage *
V
BE(sat)
I
C
=10mA, I
B
=1.0mA
0.70
-
0.85
V
Transition Frequency
f
T
I
C
=10mA, V
CE
=10V, f=100MHz
500
-
-
MHz
Collector Output Capacitance
C
ob
V
CB
=5.0V, I
E
=0, f=1.0MHz
-
-
4.0
pF
Storage Time
t
stg
I
C
=100mA, I
B1
=-I
B2
=10mA, V
CC
=10V
V
CC
=3.0V, I
C
=10mA,
I
B1
=3.0mA, I
B2
=-1.5mA
I
C
=10mA, I
B1
=3.0mA
I
B2
=-1.5mA, V
CC
=3.0V
-
-
13
nS
Turn-on Time
t
on
-
-
12
Turn-off Time
t
off
-
-
15
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