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參數(shù)資料
| 型號(hào)： | KTK5132S |
| 廠商： | KEC Holdings |
| 英文描述： | N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING, ANALOG SWITCH) |
| 中文描述： | N通道MOS場(chǎng)效應(yīng)管（超高速開(kāi)關(guān)，模擬開(kāi)關(guān)） |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 428K |
| 代理商： | KTK5132S |
2002. 6. 17
1/3
SEMICONDUCTOR
TECHNICAL DATA
KTK5132E
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
Revision No : 0
ULTRA-HIGH SPEED SWITCHING APPLICATIONS
ANALOG SWITCH APPLICATIONS
FEATURES
2.5 Gate Drive.
Low Threshold Voltage : V
th
=0.5
High Speed.
Small Package.
Enhancement-Mode.
1.5V.
MAXIMUM RATING (Ta=25
)
DIM
A
B
MILLIMETERS
1.60 0.10
0.85 0.10
+
D
E
G
H
J
ESM
0.70+
0.27+0.10/-0.05
1.60+
1.00 0.10
0.50
0.13 0.05
+
C
1
3
2
E
B
D
A
G
H
C
J
1. SOURCE
2. GATE
3. DRAIN
+
+
ELECTRICAL CHARACTERISTICS (Ta=25
)
Marking
K B
Type Name
D
G
S
THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE.
PLEASE HANDLE WITH CAUTION.
EQUIVALENT CIRCUIT
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Gate Leakage Current
I
GSS
V
GS
=
16V, V
DS
=0V
-
-
1
A
Drain-Source Breakdown Voltage
V
(BR)DSS
I
D
=100 A, V
GS
=0V
30
-
-
V
Drain Cut-off Current
I
DSS
V
DS
=30V, V
GS
=0V
-
-
1
A
Gate Threshold Voltage
V
th
V
DS
=3V, I
D
=0.1mA
0.5
-
1.5
V
Forward Transfer Admittance
|Y
fs
|
V
DS
=3V, I
D
=10mA
25
-
-
mS
Drain-Source ON Resistance
R
DS(ON)
I
D
=10mA, V
GS
=2.5V
-
4
7
Input Capacitance
C
iss
V
DS
=3V, V
GS
=0V, f=1MHz
-
8.5
-
pF
Reverse Transfer Capacitance
C
rss
V
DS
=3V, V
GS
=0V, f=1MHz
-
3.3
-
pF
Output Capacitance
C
oss
V
DS
=3V, V
GS
=0V, f=1MHz
-
9.3
-
pF
Switching Time
Turn-on Time
t
on
V
DD
=5V, I
D
=10mA, V
GS
=0
5V
-
50
-
nS
Turn-off Time
t
off
-
180
-
nS
CHARACTERISTIC
SYMBOL
RATING
UNIT
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
V
GSS
20
V
DC Drain Current
I
D
100
mA
Drain Power Dissipation
P
D
100
mW
Channel Temperature
T
ch
150
Storage Temperature Range
T
stg
-55
150
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