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參數(shù)資料
| 型號(hào)： | KTX511T |
| 廠商： | KEC Holdings |
| 英文描述： | EPITAXIAL PLANAR PNP TRANSISTOR SCHOTTKY BARRIER TYPE DIODE |
| 中文描述： | 外延平面PNP晶體管肖特基型二極管 |
| 文件頁(yè)數(shù)： | 3/5頁(yè) |
| 文件大小： | 110K |
| 代理商： | KTX511T |
2002. 1. 24
3/5
KTX511T
Revision No : 1
V - I
COLLECTOR CURRENT I (A)
C
C
COLLECTOR-EMITTER VOLTAGE V (V)
0
0
I - V
CE
-0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0
-0.2
-0.4
-0.6
-1.0
-0.8
-1.2
-1.4
-1.8
-1.6
-2.0
C
D
F
COLLECTOR CURRENT I (A)
C
C
I =0mA
-2mA
-4mA
-6mA
-8mA
-10mA
-20mA
-m
-0A
-0m
C
C
BASE-EMITTER VOLTAGE V (V)
0
0
I - V
BE
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
-0.1
-0.2
-0.3
-0.5
-0.4
-0.6
-0.7
-0.9
-0.8
-1.0
-10
-30
-50
-100
-300
-1K
-500
V
-0.01
-0.03
-0.1
-1
-3
-0.3
V - I
COLLECTOR CURRENT I (A)
C
B
B
-0.1
-0.3
-0.5
-1
-3
-10
-5
V
-0.01
-0.03
-0.1
-1
-3
-0.3
-0.01
-0.03
-0.1
-1
-3
-0.3
Ta=75 C
TaTa=25 C
I /I =20
I /I =50
Ta=75 C
Ta=-25 C
I /I =50
Ta=75 C
Ta=25 C
Ta=-25 C
30
1K
h - I
C
50
100
300
500
-0.01
-0.03
-0.1
-1
-3
-0.3
Ta=-25 C
V =-2V
Ta=75 C
Ta=25 C
C
-5
C
COLLECTOR CURRENT I (A)
V - I
C
V
-10
-30
-50
-100
-300
-500
T
T
T5
V =-2V
Q (PNP TRANSISTOR)
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|---|---|
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KTX512T | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR PNP TRANSISTOR SCHOTTKY BARRIER TYPE DIODE |
| KTX598TF | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:N CHANNEL JUNCTION FIELD EFFECT TRANSISTOR |
| KTY10 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon Spreading Resistance Temperature Sensor in Leaded Plastic Package |
| KTY10-5 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| KTY10-6 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon Temperature Sensors |
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