參數(shù)資料
型號(hào): KTX511T
廠商: KEC Holdings
英文描述: EPITAXIAL PLANAR PNP TRANSISTOR SCHOTTKY BARRIER TYPE DIODE
中文描述: 外延平面PNP晶體管肖特基型二極管
文件頁(yè)數(shù): 4/5頁(yè)
文件大?。?/td> 110K
代理商: KTX511T
2002. 1. 24
4/5
KTX511T
Revision No : 1
C
o
COLLECTOR-BASE VOLTAGE V (V)
T
T
COLLECTOR CURRENT I (A)
C
C
C
P
AMBIENT TEMPERATURE Ta ( C)
0
0
Pc - Ta
20
40
60
80
100
120
140
160
0.2
0.4
0.6
0.8
1.0
1.2
1.4
MOUNTED ON A
CERAMIC BOARD
(600mm
`
0.8mm)
MOUNTED ON A CERAMIC BOARD
(600mm
`
0.8mm)
C - V
CB
-0.1
-0.3
-1
-10
-30
-3
30
1K
f - I
C
50
100
300
500
-0.01
-0.03
-0.1
-1
-3
-0.3
V =-2V
f=1MHz
3
100
5
10
30
50
-1
-3
-5
-30
-10
C
C
COLLECTOR-EMITTER VOLTAGE V (V)
SAFE OPERATING AREA
-0.01
-0.03
-0.05
-0.1
-0.3
-0.5
-1
-3
-5
SINGLE NONREPETITIVE
PULSE Ta=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
*
I MAX.(PULSED)
I MAX
(CONTINUOUS)
10mS*
50
μ
S
10
μ
S
DCOPERATON
2
2
R
μ
A
R
REVERSE VOLTAGE V (V)
I - V
R
I - V
FORWARD VOLTAGE V (V)
F
F
F
0.001
0
100
200
300
400
500
2
10
0.01
0.1
1
10
3
10
Ta=25 C
0
1
5
3
5
10
30
50
Ta=25 C
10
15
20
25
30
D (SBD)
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