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參數(shù)資料
| 型號(hào)： | KU-BAND |
| 英文描述： | GaAs MMIC VSAT Power Amplifier， 1.4W， 14.0-14.5 GHz |
| 中文描述： | 砷化鎵微波單片集成電路的VSAT功率放大器，1.4W輸出功率，14.0-14.5千兆赫 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 38K |
| 代理商： | KU-BAND |
North America:
Tel. (800) 366-2266, Fax (800) 618-8883
Asia/Pacific:
Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe:
Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Specifications subject to change without notice.
Visit www.macom.com for additional data sheets and product information.
V 3.0
Ordering Information
Part Number
AM42-0002
Package
Ceramic Bolt Down Package
Electrical Specifications:
T
C
= +25°C, VDD = +9V, VGG = -5.0V, Z
0
= 50
Parameter
Abbv.
Linear Gain
G
L
Input VSWR
VSWR
IN
Output VSWR
VSWR
OUT
Saturated Output Power
P
SAT
Output Power @
P
1dB
,
=
Frequency = 14.0-14.5 GHz
Min.
19
—
—
30.5
—
Test Conditions
P
IN
≤
0 dBm
P
IN
≤
=
0
=
dBm
—
P
IN
=
+14 dBm
Units
dB
—
—
dBm
dBm
Typ.
22
2.5:1
2.7:1
31.5
29.5
Max.
—
2.7:1
—
—
—
Output Third Order Intercept
Power Added Efficiency
Bias Currents
IP
3
PAE
I
DD
(Refer to Note 1)
P
IN
=
+14 dBm
P
IN
=
+14 dBm
dBm
%
mA
—
—
—
41
22
950
—
—
1400
Thermal Resistance
Detector Output Voltage
θ
JC
V
det
25°C Heat Sink
R
L
=10K
=
min.
=
°C/W
V
—
—
9.5
+3.5
—
—
CR-15
Features
High Linear Gain: 22 dB Typ.
High Saturated Output Power: +31.5 dBm Typ.
High Power Added Efficiency: 22% Typ.
50
=
Input/Output Broadband Matched
Integrated Output Power Detector
High Performance Ceramic Bolt Down Package
Description
M/A-COM’s AM42-0002 is a three-stage MMIC linear power
amplifier in a ceramic bolt down style hermetic package. The
AM42-0002 employs a fully matched chip with interally
decoupled Gate and Drain bias networks and an output power
detector. The AM42-0002 is designed to be operated from a
constant voltage Drain supply.
The AM42-0002 is designed for use as an output stage or a
driver, in applications for VSAT systems. This design is fully
monolithic and requires a minimum of external components.
M/A-COM’s AM42-0002 is fabricated using a mature 0.5
micron GaAs MESFET process. The process features full
passivation for increased performance and reliability. This
product is 100% RF tested to ensure compliance to performance
specifications.
CERAMIC
BASE PLATE
4X .06 X 45°
CHAMFER
6
5
4
3
2
1
7
8
9
10
.010 SQ.
ORIENTATION TAB
2X o .096 THRU
o.004 M
A B C
.090
MAX
.040
.33
.005
± .002
.030
.318
± .010
.328
± .010
.050 MIN.
10
X
.530
.70
.159
.010
± .003
10
X
.100
4X
.115
± .010
.050
4X
.085
- C -
- B -
- A -
Notes: (unless otherwise specified)
1. Dimensions are in inches.
2. Tolerance: .XXX = ± 0.005
.XX = ± 0.010
IP
3
is measured with two +21 dBm output tones @ 1 MHz spacing.
AM42-0002
GaAs MMIC VSAT Power Amplifier 1.4W
14.0 - 14.5 GHz
1
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