參數(shù)資料
型號: kw15n120
廠商: SIEMENS AG
英文描述: Fast S-IGBT in NPT-technology( NPT 技術(shù)中的快速S-IGBT)
中文描述: 快速的S -不擴(kuò)散核武器條約IGBT的技術(shù)(不擴(kuò)散技術(shù)中的快速第S - IGBT的)
文件頁數(shù): 8/13頁
文件大小: 401K
代理商: KW15N120
Preliminary
SKW15N120
Power Semiconductors
8
Mar-00
V
G
,
G
-
E
0nC
50nC
Q
GE
,
GATE CHARGE
100nC
150nC
0V
5V
10V
15V
20V
U
CE
=960V
C
,
C
0V
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 18. Typical capacitance as a
function of collector-emitter voltage
(
V
GE
= 0V,
f
= 1MHz)
10V
20V
30V
100pF
1nF
C
rss
C
oss
C
iss
Figure 17. Typical gate charge
(
I
C
= 15A)
t
s
,
S
10V
11V
12V
13V
14V
15V
0
μ
s
10
μ
s
20
μ
s
30
μ
s
I
C
,
S
10V
12V
14V
16V
18V
20V
0A
50A
100A
150A
200A
250A
300A
V
GE
,
GATE
-
EMITTER VOLTAGE
Figure 19. Short circuit withstand time as a
function of gate-emitter voltage
(
V
CE
= 1200V, start at
T
j
= 25
°
C)
V
GE
,
GATE
-
EMITTER VOLTAGE
Figure 20. Typical short circuit collector
current as a function of gate-emitter voltage
(100V
V
CE
1200V,
T
C
= 25
°
C,
T
j
150
°
C)
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