參數(shù)資料
型號： L256ML123RF
廠商： Advanced Micro Devices, Inc.
英文描述： 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control
中文描述： 256兆位（16 M中的x 16-Bit/32 M中的x 8位）MirrorBitTM 3.0伏特，只有統(tǒng)一閃存部門與VersatileI /價外控制
文件頁數(shù)： 50/69頁
文件大?。?/td> 546K
代理商： L256ML123RF
48
Am29LV256M
December 16, 2005
D A T A S H E E T
TEST CONDITIONS
Table 14.
Test Specifications
Note:
If V
IO
< V
CC
, the reference level is 0.5 V
IO
.
KEY TO SWITCHING WAVEFORMS
2.7 k
Ω
C
L
6.2 k
Ω
3.3 V
Device
Under
Test
Note:
Diodes are IN3064 or equivalent.
Figure 11.
Test Setup
Test Condition
All Speeds
Unit
Output Load
1 TTL gate
Output Load Capacitance, C
L
(including jig capacitance)
30
pF
Input Rise and Fall Times
5
ns
Input Pulse Levels
0.0–3.0
V
Input timing measurement
reference levels (See Note)
1.5
V
Output timing measurement
reference levels
0.5 V
IO
V
WAVEFORM
INPUTS
OUTPUTS
Steady
Changing from H to L
Changing from L to H
Don’t Care, Any Change Permitted
Changing, State Unknown
Does Not Apply
Center Line is High Impedance State (High Z)
3.0 V
0.0 V
1.5 V
0.5 V
IO
V
Output
Measurement Level
Input
Note:
If V
IO
< V
CC
, the input measurement reference level is 0.5 V
IO
.
Figure 12.
Input Waveforms and
Measurement Levels
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