參數(shù)資料
型號： L256ML123RF
廠商： Advanced Micro Devices, Inc.
英文描述： 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control
中文描述： 256兆位（16 M中的x 16-Bit/32 M中的x 8位）MirrorBitTM 3.0伏特，只有統(tǒng)一閃存部門與VersatileI /價外控制
文件頁數(shù)： 67/69頁
文件大?。?/td> 546K
代理商： L256ML123RF
December 16, 2005
Am29LV256M
65
D A T A S H E E T
REVISION SUMMARY
Revision A (August 3, 2001)
Initial release as abbreviated Advance Information
data sheet.
Revision A+1 (September 12, 2001)
Ordering Information
Changed package part number designation from WH
to PC.
Physical Dimensions
Added the TS056 and LAA064 packages.
Revision A+2 (October 3, 2001)
Global
Corrected title from 64 Mbit to 256 Mbit. Added 120 ns
speed option.
Distinctive Characteristics
SecSi
TM
(Secured Silicon) Sector region
:
Corrected
64-byte to 256-byte.
Connection Diagram
Modified Fortified BGA ball grid to an 8 x 8 ball matrix.
Changed RFU (reserved for future use) balls to NC
(No Connection).
Ordering Information
Changed operating voltage range on 90 ns speed op-
tion to 3.0–3.6 V.
Pin Description
Added A-1 description.
Revision A+3 (March 25, 2002)
Distinctive Characteristics
Clarified description of Enhanced VersatileIO control.
Physical Dimensions
Added drawing that shows both TS056 and TSR056
specifications.
Revision B (July 1, 2002)
Expanded data sheet to full specification version.
Revision B+1 (July 10, 2002)
Ordering Information, Physical Dimensions
Corrected package description to LAC064, 18 x 12
mm Fortified BGA.
DC Characteristics table
Deleted I
ACC
specification.
Revision B+2 (September 9, 2002)
Product Selector Guide, Ordering Information,
Read-Only Operations, Erase and Program
Operations, and Alternate CE# Controlled Erase
and Program Operations
Added regulated OPNs.
Changed all OPNs that end with 4 or 9 to end with 3 or
8.
Changed all package markings that contain combina-
tions that end with 4 or 9 to end with 3 or 8.
CFI
Modified wording of last paragraph to read: “reading
array data.”
Program Suspend/Program Resume Command
Sequence
Changed 15
μs
typical to maximum and added 5 μs
typical.
Erase Suspend/Erase Resume Commands
Changed typical from 20
μs to 5 μs and added a maxi-
mum of 20 μs.
LAC064—64-Ball Fortified Ball Grid Array
Added final package drawing.
Revision B+3 (October 23, 2002)
SecSi (Secured Silicon) Sector Flash
Memory Region
Added x8 address range.
Physical Dimensions
Modified drawing to show the actual number of balls
on device package.
Revision B+4 (November 6, 2002)
Global
Removed the Enhanced VI/O option and changed it to
VI/O only.
Product Selector Guide
Removed the 98R, 108, 108R, 118, 118R, 128, and
128R Speed Options.
Modified Note #2.
Moved V
IO
from far left side of the block diagram and
moved it to Input/Output Buffers.
Ordering Information
Modified Order numbers and package markings to re-
flect the removal of speed options.
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