DS_ L48DB12001 _02102009
2
TECHNICAL SPECIFICATIONS
(TA=25°C, airflow rate=300 LFM, Vin=48Vdc, nominal Vout unless otherwise noted.)
PARAMETER
NOTES and CONDITIONS
L48DB12001
Min.
Typ.
Max.
Units
ABSOLUTE MAXIMUM RATINGS
Input Voltage
Continuous
80
Vdc
Transient
100ms
100
Vdc
Operating Temperature
Refer to Figure 20 for measuring point
-40
119
°C
Storage Temperature
-55
125
°C
Input/Output Isolation Voltage
2250
Vdc
INPUT CHARACTERISTICS
Operating Input Voltage
36
48
75
Vdc
Input Under-Voltage Lockout
Turn-On Voltage Threshold
32.5
34.0
35.5
Vdc
Turn-Off Voltage Threshold
29
30.5
32
Vdc
Lockout Hysteresis Voltage
3
4
5
Vdc
Maximum Input Current
100% Load, 36Vin
1.2
A
No-Load Input Current
50
mA
Off Converter Input Current
20
mA
Inrush Current(I
2t)
1
A
2s
Input Reflected-Ripple Current
P-P thru 12H inductor, 5Hz to 20MHz
20
mA
Input Voltage Ripple Rejection
120Hz
60
dB
OUTPUT CHARACTERISTICS
Output Voltage Set Point
Vin=48V, lo=lo. Max, Tc=25℃
Vout 1,2
±
11.80
±
12.00
±
12.20
V
Output Voltage Regulation
Over Load
lo1= lo2=lo, min to lo, max
Vout 1,2
±
20
±
180
mV
Over Line
Vin=36V to 75V,Io1=Io2=full load
Vout 1,2
±
20
±
120
mV
Cross Regulation
| Io1-Io2| <20% Io,max
±
100
±
200
mV
Over Temperature
Tc=-40℃ to 119℃
±
120
mV
Total Output Voltage Range
line and temperature,
|Io1-Io2| <20% Io,max
±
360
mV
Output Voltage Ripple and Noise
5Hz to 20MHz bandwidth
Peak-to-Peak
Io1, Io2 Full Load, 1F ceramic, 10F
tantalum
Vout 1, 2
40
100
mV
RMS
Io1, Io2 Full Load, 1F ceramic, 10F
tantalum
Vout 1, 2
10
30
mV
Operating Output Current Range
Vout 1, 2
0
1.25
A
Output DC Current-Limit Inception
Io1+lo 2
3.25
5.00
A
DYNAMIC CHARACTERISTICS
Output Voltage Current Transient
48V, 10F Tan & 1F Ceramic load cap, 0.1A/s
Io1: 50% to 75%Io,max; Io2= 50%Io,max
Vout 1
100
200
Positive Step Change in Output Current
Io1: 50% to 75%Io,max; Io2= 50%Io,max
Vout 2
100
200
mV
Io1: 75% to 50%Io,max; Io2= 50%Io,max
Vout 1
100
200
Negative Step Change in Output Current
Io1: 75% to 50%Io,max; Io2= 50%Io,max
Vout 2
100
200
mV
Cross dynamic
100
mV
Settling Time (within 1% Vout nominal)
100
us
Turn-On Transient
Delay Time, From On/Off Control
2
ms
Delay Time, From Input
2
ms
Start-up Time, From On/Off Control
10
20
ms
Start-up Time, From Input
10
20
ms
Maximum Output Capacitance
Full load; 5% overshoot of Vout at startup
2200
F
EFFICIENCY
100% Load
Iout1, Iout2 full load
86
%
60% Load
Iout1, Iout2 60% of full load
82
%
ISOLATION CHARACTERISTICS
Input to Output
<1 minute
2250
Vdc
Isolation Resistance
10
M
Isolation Capacitance
1500
pF
FEATURE CHARACTERISTICS
Switching Frequency
330
kHz
ON/OFF Control, (Logic Low-Module ON)
Logic Low
Von/off at Ion/off=1.0mA
-0.7
0.8
V
Logic High
Von/off at Ion/off=0.0 A
3.5
12
V
ON/OFF Current
Ion/off at Von/off=0.0V
1
mA
Leakage Current
Logic High, Von/off=15V
300
uA
Output Voltage Trim Range
Pout ≦ max rated power
Iout ≦ max 120% rated Iout
-10
+10
%
Output Over-Voltage Protection
Over full temp range; %of nominal Vout
125
150
%
GENERAL SPECIFICATIONS
MTBF
Io=80% of Io, max; Ta=40°C
TBD
M hours
Weight
27.5
grams
Over-Temperature Shutdown
Refer to Figure 20 for measuring point
124
°C