參數(shù)資料
型號： L640DU12RF
廠商： Advanced Micro Devices, Inc.
英文描述： 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIO⑩ Control
中文描述： 64兆位（4個M x 16位），3.0伏的CMOS只均勻部門閃存與VersatileIO⑩控制記憶
文件頁數(shù)： 26/57頁
文件大?。?/td> 885K
代理商： L640DU12RF
24
Am29LV640D/Am29LV641D
22366C6 January22,2007
D A T A S H E E T
The system
must
issue the reset command to return
the device to the read (or erase-suspend-read) mode if
DQ5 goes high during an active program or erase op-
eration, or if the device is in the autoselect mode. See
the next section,
Reset Command
, for more informa-
tion.
See also
“Requirements for Reading Array Data” on
page 10
in the
Device Bus Operations
section for
more information. The
“Read-Only Operations” on
page 37
table provides the read parameters, and
Fig-
ure 13, on page 37
shows the timing diagram.
Reset Command
Writing the reset command resets the device to the
read or erase-suspend-read mode. Address bits are
don’t cares for this command.
The reset command may be written between the se-
quence cycles in an erase command sequence before
erasing begins. This resets the device to the read
mode. Once erasure begins, however, the device ig-
nores reset commands until the operation is complete.
The reset command may be written between the
sequence cycles in a program command sequence
before programming begins. This resets the device to
the read mode. If the program command sequence is
written while the device is in the Erase Suspend mode,
writing the reset command returns the device to the
erase-suspend-read mode. Once programming be-
gins, however, the device ignores reset commands
until the operation is complete.
The reset command may be written between the se-
quence cycles in an autoselect command sequence.
Once in the autoselect mode, the reset command
must be written to return to the read mode. If the de-
vice entered the autoselect mode while in the Erase
Suspend mode, writing the reset command returns the
device to the erase-suspend-read mode.
If DQ5 goes high during a program or erase operation,
writing the reset command returns the device to the
read mode (or erase-suspend-read mode if the device
was in Erase Suspend).
Autoselect Command Sequence
The autoselect command sequence allows the host
system to access the manufacturer and device codes,
and determine whether or not a sector is protected.
Table 10 on page 28
shows the address and data re-
quirements. This method is an alternative to that
shown in
Table 3 on page 16
, which is intended for
PROM programmers and requires V
ID
on address pin
A9. The autoselect command sequence may be writ-
ten to an address that is either in the read or
erase-suspend-read mode. The autoselect command
cannot be written while the device is actively program-
ming or erasing.
The autoselect command sequence is initiated by first
writing two unlock cycles. This is followed by a third
write cycle that contains the autoselect command. The
device then enters the autoselect mode. The system
may read at any address any number of times without
initiating another autoselect command sequence:
■
A read cycle at address XX00h returns the manu-
facturer code.
■
A read cycle at address XX01h returns the device
code.
■
A read cycle to an address containing a sector
group address (SA), and the address 02h on A7–A0
returns 01h if the sector group is protected, or 00h
if it is unprotected. (Refer to
Table 4 on page 17
for
valid sector addresses).
The system must write the reset command to return to
the read mode (or erase-suspend-read mode if the de-
vice was previously in Erase Suspend).
Enter SecSi Sector/Exit SecSi Sector
Command Sequence
The SecSi Sector region provides a secured data area
containing an 8-word random Electronic Serial Num-
ber (ESN). The system can access the SecSi Sector
region by issuing the three-cycle Enter SecSi Sector
command sequence. The device continues to access
the SecSi Sector region until the system issues the
four-cycle Exit SecSi Sector command sequence. The
Exit SecSi Sector command sequence returns the de-
vice to normal operation.
Table 10 on page 28
shows
the address and data requirements for both command
sequences. See also
“SecSi (Secured Silicon) Sector
Flash Memory Region” on page 20
for further informa-
tion.
Word Program Command Sequence
Programming is a four-bus-cycle operation. The pro-
gram command sequence is initiated by writing two
unlock write cycles, followed by the program set-up
command. The program address and data are written
next, which in turn initiate the Embedded Program al-
gorithm. The system is
not
required to provide further
controls or timings. The device automatically provides
internally generated program pulses and verifies the
programmed cell margin. The
“Command Definitions”
on page 28
shows the address and data requirements
for the word program command sequence.
When the Embedded Program algorithm is complete,
the device returns to the read mode and addresses
are no longer latched. The system determines the sta-
tus of the program operation by using DQ7, DQ6, or
RY/BY#. Refer to
“Write Operation Status” on page 29
for information on these status bits.
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L640DU12RI 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIO⑩ Control
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L640DU21RF 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIO⑩ Control
L640DU21RI 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIO⑩ Control
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