參數(shù)資料
型號(hào)： L640DU12RF
廠商： Advanced Micro Devices, Inc.
英文描述： 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIO⑩ Control
中文描述： 64兆位（4個(gè)M x 16位），3.0伏的CMOS只均勻部門(mén)閃存與VersatileIO⑩控制記憶
文件頁(yè)數(shù)： 5/57頁(yè)
文件大?。?/td> 885K
代理商： L640DU12RF
January22,2007 22366C6
Am29LV640D/Am29LV641D
3
D A T A S H E E T
TABLE OF CONTENTS
Product Selector Guide . . . . . . . . . . . . . . . . . . . . . 4
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Connection Diagrams . . . . . . . . . . . . . . . . . . . . . . . 5
Special Handling Instructions for FBGA/
f
BGA Packages .........7
Pin Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Ordering Information . . . . . . . . . . . . . . . . . . . . . . . 9
Device Bus Operations . . . . . . . . . . . . . . . . . . . . . 10
Table 1. Device Bus Operations .....................................................10
VersatileIO
(V
IO
) Control .....................................................10
Requirements for Reading Array Data ...................................10
Writing Commands/Command Sequences ............................11
Accelerated Program Operation ......................................................11
Autoselect Functions .......................................................................11
Standby Mode ........................................................................11
Automatic Sleep Mode ...........................................................11
RESET#: Hardware Reset Pin ...............................................11
Output Disable Mode ..............................................................12
Table 2. Sector Address Table ........................................................12
Autoselect Mode .....................................................................16
Table 3. Autoselect Codes, (High Voltage Method) .......................16
Sector Group Protection and Unprotection .............................17
Table 4. Sector Group Protection/Unprotection AddressTable .....17
Write Protect (WP#) ................................................................18
Temporary Sector Group Unprotect .......................................18
Figure 1. Temporary Sector Group UnprotectOperation................ 18
Figure 2. In-System Sector Group Protect/UnprotectAlgorithms... 19
SecSi (Secured Silicon) Sector Flash MemoryRegion ..........20
Table 5. SecSi Sector Contents ......................................................20
Hardware Data Protection ......................................................20
Low VCC Write Inhibit .....................................................................20
Write Pulse “Glitch” Protection ........................................................21
Logical Inhibit ..................................................................................21
Power-Up Write Inhibit ....................................................................21
Common Flash Memory Interface (CFI). . . . . . . 21
Table 6. CFI Query Identification String.......................................... 21
System Interface String................................................................... 22
Table 8. Device Geometry Definition.............................................. 22
Table 9. Primary Vendor-Specific Extended Query........................ 23
Command Definitions . . . . . . . . . . . . . . . . . . . . . 23
Reading Array Data ................................................................23
Reset Command .....................................................................24
Autoselect Command Sequence ............................................24
Enter SecSi Sector/Exit SecSi Sector CommandSequence ..24
Word Program Command Sequence .....................................24
Unlock Bypass Command Sequence ..............................................25
Figure 3. Program Operation.......................................................... 25
Chip Erase Command Sequence ...........................................25
Sector Erase Command Sequence ........................................26
Erase Suspend/Erase Resume Commands ...........................26
Figure 4. Erase Operation............................................................... 27
Command Definitions .............................................................28
Command Definitions...................................................................... 28
Write Operation Status . . . . . . . . . . . . . . . . . . . . . 29
DQ7: Data# Polling .................................................................29
Figure 5. Data# Polling Algorithm................................................... 29
RY/BY#: Ready/Busy# ............................................................30
DQ6: Toggle Bit I ....................................................................30
Figure 6. Toggle Bit Algorithm........................................................ 30
DQ2: Toggle Bit II ...................................................................31
Reading Toggle Bits DQ6/DQ2 ...............................................31
DQ5: Exceeded Timing Limits ................................................31
DQ3: Sector Erase Timer .......................................................31
Table 11. Write Operation Status ...................................................32
Absolute Maximum Ratings . . . . . . . . . . . . . . . . 33
Figure 7. Maximum Negative OvershootWaveform..................... 33
Figure 8. Maximum Positive OvershootWaveform....................... 33
Operating Ranges . . . . . . . . . . . . . . . . . . . . . . . . 33
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 34
Figure 9. I
CC1
Current vs. Time (Showing
ActiveandAutomaticSleepCurrents)........................................... 35
Figure 10. Typical I
vs. Frequency............................................ 35
Test Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Figure 11. Test Setup.................................................................... 36
Table 12. Test Specifications .........................................................36
Key to Switching Waveforms. . . . . . . . . . . . . . . . 36
Figure 12. Input Waveforms and
Measurement Levels...................................................................... 36
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 37
Read-Only Operations ...........................................................37
Figure 13. Read Operation Timings............................................... 37
Hardware Reset (RESET#) ....................................................38
Figure 14. Reset Timings............................................................... 38
Erase and Program Operations ..............................................39
Figure 15. Program Operation Timings.......................................... 40
Figure 16. Accelerated Program Timing Diagram.......................... 40
Figure 17. Chip/Sector Erase Operation Timings.......................... 41
Figure 18. Data# Polling Timings
(During Embedded Algorithms)...................................................... 42
Figure 19. Toggle Bit Timings
(During Embedded Algorithms)...................................................... 43
Figure 20. DQ2 vs. DQ6................................................................. 43
Temporary Sector Unprotect ..................................................44
Figure 21. Temporary Sector Group Unprotect TimingDiagram... 44
Figure 22. Sector Group Protect and Unprotect TimingDiagram.. 45
Alternate CE# Controlled Erase and ProgramOperations .....46
Figure 23. Alternate CE# Controlled Write
(Erase/Program)OperationTimings.............................................. 47
Erase And Programming Performance . . . . . . . 48
Latchup Characteristics. . . . . . . . . . . . . . . . . . . . 48
TSOP Pin Capacitance . . . . . . . . . . . . . . . . . . . . . 48
Data Retention. . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . 49
SSO056—56-Pin Shrink Small Outline Package (SSOP) ......49
FBE063—63-Ball Fine-Pitch Ball Grid Array
(FBGA)12x11mmpackage .................................................50
LAA064—64-Ball Fortified Ball Grid Array
(
F
BGA)13x11mmpackage .................................................51
TS 048—48-Pin Standard TSOP ............................................52
Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 53
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L640DU12RI 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIO⑩ Control
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
L640DU12RI 制造商:AMD 制造商全稱(chēng):Advanced Micro Devices 功能描述:64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIO⑩ Control
L640DU21NF 制造商:AMD 制造商全稱(chēng):Advanced Micro Devices 功能描述:64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIO⑩ Control
L640DU21NI 制造商:AMD 制造商全稱(chēng):Advanced Micro Devices 功能描述:64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIO⑩ Control
L640DU21RF 制造商:AMD 制造商全稱(chēng):Advanced Micro Devices 功能描述:64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIO⑩ Control
L640DU21RI 制造商:AMD 制造商全稱(chēng):Advanced Micro Devices 功能描述:64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIO⑩ Control
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