參數(shù)資料
型號(hào)： L640DU12RI
廠商： Advanced Micro Devices, Inc.
英文描述： 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIO⑩ Control
中文描述： 64兆位（4個(gè)M x 16位），3.0伏的CMOS只均勻部門(mén)閃存與VersatileIO⑩控制記憶
文件頁(yè)數(shù)： 12/57頁(yè)
文件大?。?/td> 885K
代理商： L640DU12RI
10
Am29LV640D/Am29LV641D
22366C6 January22,2007
D A T A S H E E T
DEVICE BUS OPERATIONS
This section describes the requirements and use of
the device bus operations, which are initiated through
the internal command register. The command register
itself does not occupy any addressable memory loca-
tion. The register is a latch used to store the com-
mands, along with the address and data information
needed to execute the command. The contents of the
register serve as inputs to the internal state machine.
The state machine outputs dictate the function of the
device.
Table 1
lists the device bus operations, the in-
puts and control levels they require, and the resulting
output. The following subsections describe each oper-
ation in further detail.
Table 1.
Device Bus Operations
Legend:
L = Logic Low = V
IL
, H = Logic High = V
IH
, V
ID
= 8.5–12.5
V, V
HH
= 11.5–12.5
V, X = Don’t Care, SA = Sector Address,
A
IN
= Address In, D
IN
= Data In, D
OUT
= Data Out
Notes:
1. Addresses are A21:A0. Sector addresses are A21:A15.
2. The sector protect and sector unprotect functions may also be implemented via programming equipment. See the “Sector Group
Protection and Unprotection” section.
3. If WP# = V
IL
, the first or last sector remains protected. If WP# = V
IH
, the first or last sector is protected or unprotected as
determined by the method described in “Sector Group Protection and Unprotection”. All sectors are unprotected when shipped
from the factory (The SecSi Sector may be factory protected depending on version ordered.)
4. D
IN
or D
OUT
as required by command sequence, data polling, or sector protect algorithm (see
Figure 2, on page 19
).
VersatileIO
(V
IO
) Control
The VersatileIO (V
IO
) control allows the host system
to set the voltage levels that the device generates and
tolerates on CE# and DQ I/Os to the same voltage
level that is asserted on V
IO
. V
IO
is available in two
configurations (1.8–2.9 V and 3.0–5.0 V) for operation
in various system environments.
For example, a V
IO
of 4.5–5.0 volts allows for I/O at the
5 volt level, driving and receiving signals to and from
other 5 V devices on the same data bus.
Requirements for Reading Array Data
To read array data from the outputs, the system must
drive the CE# and OE# pins to V
IL
. CE# is the power
control and selects the device. OE# is the output con-
trol and gates array data to the output pins. WE#
should remain at V
IH
.
The internal state machine is set for reading array data
upon device power-up, or after a hardware reset. This
ensures that no spurious alteration of the memory
content occurs during the power transition. No com-
mand is necessary in this mode to obtain array data.
Standard microprocessor read cycles that assert valid
addresses on the device address inputs produce valid
Operation
CE#
OE#
WE#
RESET#
WP#
ACC
Addresses
(
Note 2
)
DQ0–
DQ15
Read
L
L
H
H
X
X
A
IN
D
OUT
Write (Program/Erase)
L
H
L
H
(
Note 3
)
X
A
IN
(
Note 4
)
Accelerated Program
L
H
L
H
(
Note 3
)
V
HH
A
IN
(
Note 4
)
Standby
V
CC
±
0.3 V
X
X
V
CC
±
0.3 V
X
H
X
High-Z
Output Disable
L
H
H
H
X
X
X
High-Z
Reset
X
X
X
L
X
X
X
High-Z
Sector Group Protect (
Note 2
)
L
H
L
V
ID
H
X
SA, A6 = L,
A1 = H, A0 = L
(
Note 4
)
Sector Group Unprotect
(
Note 2
)
L
H
L
V
ID
H
X
SA, A6 = H,
A1 = H, A0 = L
(
Note 4
)
Temporary Sector Group
Unprotect
X
X
X
V
ID
H
X
A
IN
(
Note 4
)
相關(guān)PDF資料
PDF描述
L640GU53NI 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control
L640GU53RI 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control
L640GU73PI 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control
L640GU73VI 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control
L640MH01NI 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
L640DU21NF 制造商:AMD 制造商全稱(chēng):Advanced Micro Devices 功能描述:64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIO⑩ Control
L640DU21NI 制造商:AMD 制造商全稱(chēng):Advanced Micro Devices 功能描述:64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIO⑩ Control
L640DU21RF 制造商:AMD 制造商全稱(chēng):Advanced Micro Devices 功能描述:64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIO⑩ Control
L640DU21RI 制造商:AMD 制造商全稱(chēng):Advanced Micro Devices 功能描述:64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIO⑩ Control
L640DU90NF 制造商:AMD 制造商全稱(chēng):Advanced Micro Devices 功能描述:64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIO⑩ Control
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*