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參數(shù)資料
| 型號： | L8050QLT1G |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | General Purpose Transistors NPN Silicon |
| 中文描述： | 通用晶體管NPN硅 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 50K |
| 代理商： | L8050QLT1G |
LESHAN RADIO COMPANY, LTD.
L8050*LT1–2/3
L8050*LT1
ELECTRICAL CHARACTERISTICS (T
A
=25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
V
(BR)CEO
25
–
–
V
(I
C
=1.0mA)
Emitter-Base Breakdown Voltage
V
(BR)EBO
5
–
–
V
(I
E
=100
μΑ
)
Collector-Base Breakdown Voltage
V
(BR)CBO
40
–
–
V
(I
C
=100
μΑ
)
Collector Cutoff Current (V
CB
=35V)
I
CBO
–
–
150
nA
Emitter Cutoff Current (V
EB
=4V)
I
EBO
–
–
150
nA
DC Current Gain
I
C
=100mA,V
CE
=1V
h
FE
150 - 600
Collector-Emitter Saturation Voltage
(I
C
=800mA)
V
CE(S)
-
-
0.5
NOTE :
*
P
Q
R
S
h
FE
100~200
150~300
200~400
300~600
ELECTRICAL CHARACTERISTICS (T
A
=25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
V
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|---|---|
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