參數(shù)資料
型號(hào): L8550HQLT1
廠商: 樂(lè)山無(wú)線電股份有限公司
英文描述: General Purpose Transistors NPN Silicon
中文描述: 通用晶體管NPN硅
文件頁(yè)數(shù): 1/3頁(yè)
文件大?。?/td> 58K
代理商: L8550HQLT1
LESHAN RADIO COMPANY, LTD.
L8550H*LT1-1/3
General Purpose Transistors
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
V
CEO
V
CBO
V
EBO
I
C
Max
25
40
5
1500 mAdc
Unit
V
V
V
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-continuoun
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR-5 Board,(1)
P
D
T
A
=25°C
225
mW
Derate above 25°C
1.8
mW/°C
Thermal Resistance,Junction to Ambient
R
θ
J A
556
°C/W
Total Device Dissipation
P
D
Alumina Substrate,(2) TA=25°C
300
mW
Derate above 25°C
2.4
mW/°C
Thermal Resistance,Junction to Ambient
R
θ
J A
417
°C/W
Junction and Storage Temperature
T
j,
T
S
t
g
-55 to +150
°C
L8550H*LT1
1
3
2
SOT–23
FEATURE
High current capacity in compact package.
I
C
=1.5A.
Epitaxial planar type.
NPN complement: L8050H
Pb-Free Package is available.
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
L8550HPLT1
1HB
L8550HPLT1G
1HB
(Pb-Free)
L8550HQLT1
1HD
L8550HQLT1G
1HD
(Pb-Free)
3000/Tape&Reel
Shipping
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
Version 1.1
1
BASE
2
EMITTER
COLLECTOR
3
相關(guān)PDF資料
PDF描述
L8550HQLT1G General Purpose Transistors NPN Silicon
L8550HPLT1 General Purpose Transistors NPN Silicon
L8550HPLT1G General Purpose Transistors NPN Silicon
L8550LT1 General Purpose Transistors PNP Silicon
L8550LT1G General Purpose Transistors PNP Silicon
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
L8550HQLT1G 制造商: 功能描述:L8550HQLT1G
L8550LT1 制造商:LRC 制造商全稱(chēng):Leshan Radio Company 功能描述:General Purpose Transistors PNP Silicon
L8550LT1G 制造商:LRC 制造商全稱(chēng):Leshan Radio Company 功能描述:General Purpose Transistors PNP Silicon
L8550PLT1 制造商:LRC 制造商全稱(chēng):Leshan Radio Company 功能描述:General Purpose Transistors PNP Silicon
L8550PLT1G 制造商:LRC 制造商全稱(chēng):Leshan Radio Company 功能描述:General Purpose Transistors PNP Silicon