參數(shù)資料
型號: LB401
廠商: Polyfet RF Devices
英文描述: SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
中文描述: 硅柵增強型射頻功率LDMOS晶體管
文件頁數(shù): 2/2頁
文件大?。?/td> 38K
代理商: LB401
L4 1 DIE ID, GM vs VG
0.1
1
10
100
0
2
4
8
10
12
14
Vgs in Volts
ID
G
L4 1DIE CAP ACIT ANCE
1
10
100
1000
0
5
10
15
20
25
30
VDS IN VOLT S
Coss
Ciss
Crss
L B 4 0 1 F r e q = 5 0 0 M H z , V d s = 2 8 V d c , I d q = . 8 A
0
2 0
4 0
6 0
8 0
1 0 0
1 2 0
1 4 0
1 6 0
0
1
2
3
4
5
6
7
8
9
1 0
P i n i n W a t t s
1 1
1 2
1 3
1 4
1 5
1 6
1 7
1 8
1 9
Pout
Gain
Efficiency@100W = 55%
POLYFET RF DEVICES
POUT VS PIN GRAPH
CAPACITANCE VS VOLTAGE
ID & GM VS VGS
IV CURVE
Zin Zout
PACKAGE DIMENSIONS IN INCHES
LB401
L4 1 DIE IV
0
2
4
6
8
10
12
14
16
18
0
2
4
6
8
10
12
14
16
18
20
VDS IN VOLTS
I
vg=2v
Vg=4v
Vg=6v
vg=8v
vg=10v
vg=12v
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
REVISION 11/14/2001
Tolerance .XX +/-0.01 .XXX +/-.005 inches
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