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參數(shù)資料
| 型號： | LBAS16LT1G |
| 廠商： | 樂山無線電股份有限公司 |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | SWITCHING DIODE |
| 中文描述： | 開關(guān)二極管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 63K |
| 代理商： | LBAS16LT1G |
LESHAN RADIO COMPANY, LTD.
LBAS16LT1-1/3
1
3
2
Switching Diode
MAXIMUM RATINGS
Rating
Symbol
V
R
I
F
I
FM(surge)
Value
Unit
Continuous Reverse Voltage
Peak Forward Current
Peak Forward Surge Current
75
200
500
Vdc
mAdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
P
D
Max
225
Unit
mW
Total Device Dissipation FR– 5 Board, (1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
1.8
556
300
mW/°C
°C/W
mW
R
θ
JA
P
D
2.4
417
mW/°C
°C/W
°C
R
θ
JA
T
J
, T
stg
–55 to +150
ELECTRICAL CHARACTERISTICS
(T A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(V
R
= 75Vdc)
(V
R
= 75 Vdc, T
J
= 150°C)
(V
R
= 25 Vdc, T
J
= 150°C)
Reverse Breakdown Voltage
(I
BR
= 100
μ
Adc)
Forward Voltage
(I
F
= 1.0 mAdc)
(I
F
= 10 mAdc)
(I
F
= 50 mAdc)
(I
F
= 150 mAdc)
Diode Capacitance
(V
R
= 0, f = 1.0 MHz)
Forward Recovery Voltage
(I
F
= 10 mAdc, t
r
= 20ns )
Reverse Recovery Time
(I
F
= I
R
= 10 mAdc, R
L
= 50
)
Stored Charge
(I
F
= 10 mAdc to V
R
= 5.0Vdc, R
L
= 500
)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
I
R
μ
Adc
—
—
—
1.0
50
30
V
(BR)
75
—
Vdc
V
F
mV
—
—
—
—
715
855
1000
1250
C
D
—
2.0
pF
V
FR
–-
1.75
Vdc
t
rr
—
6.0
ns
Q
S
—
45
pC
LBAS16LT1
SOT–23
3
CATHODE
1
ANODE
Pb-Free Package is available.
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Package
Shipping
LBAS16LT1
A6
SOT-23
3000/Tape&Reel
LBAS16LT1G
A6
(Pb-Free)
SOT-23
3000/Tape&Reel
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LBAS16WT1 | Silicon Switching Diode |
| LBAS20HT1 | High Voltage Switching Diode |
| LBAS21HT1 | HIGH VOLTAGE SWITCHING DIODE |
| LBAS21LT1 | High Voltage Switching Diode |
| LBAS21LT1G | High Voltage Switching Diode |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LBAS16WT1 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Silicon Switching Diode |
| LBAS170HT1G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:SCHOTTKY BARRIER DIODE Schottky diode for high-speed switching |
| LBAS170HT3G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:SCHOTTKY BARRIER DIODE Schottky diode for high-speed switching |
| LBAS20HT1 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:High Voltage Switching Diode |
| LBAS20HT1G | 制造商:LRC Leshan Radio Co Ltd 功能描述: 制造商:LRC 功能描述: |
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