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參數(shù)資料
| 型號： | LBAS16LT1G |
| 廠商： | 樂山無線電股份有限公司 |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | SWITCHING DIODE |
| 中文描述： | 開關(guān)二極管 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 63K |
| 代理商： | LBAS16LT1G |
LESHAN RADIO COMPANY, LTD.
LBAS16LT1-2/3
LBAS16LT1
Notes: 1. A 2.0 k
variable resistor adjusted for a Forward Current (I
F
) of 10 mA.
Notes:
2. Input pulse is adjusted so I
R(peak)
is equal to 10 mA.
Notes:
3. t
p
t
rr
Figure 1. Recovery Time Equivalent Test Circuit
100
10
1.0
0.1
0.2
0.4
0.6
0.8
1.0
1.2
T
A
= 85°C
T
A
= 25°C
T
A
= – 40°C
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
T
A
= 55°C
T
A
= 25°C
0
10
20
30
40
50
10
1.0
0.1
0.01
0.001
0
2
4
6
8
0.68
0.64
0.60
0.56
0.52
I
F
,
C
D
,
V
F
, FORWARD VOLTAGE (VOLTS)
Figure 2. Forward Voltage
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 3. Leakage Current
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
I
R
,
μ
A
+10 V
2.0 k
820
100
μ
H
0.1
μ
F
D.U.T.
0.1
μ
F
50
OUTPUT
PULSE
GENERATOR
t
r
50
INPUT
SAMPLING
OSCILLOSCOPE
t
p
t
10%
90%
I
F
I
R
t
rr
t
i
R(REC)
= 1.0 mA
OUTPUT PULSE
(I
F
= I
R
= 10 mA; MEASURED
at i
R(REC)
= 1.0 mA)
INPUT SIGNAL
I
F
V
R
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LBAS16WT1 | Silicon Switching Diode |
| LBAS20HT1 | High Voltage Switching Diode |
| LBAS21HT1 | HIGH VOLTAGE SWITCHING DIODE |
| LBAS21LT1 | High Voltage Switching Diode |
| LBAS21LT1G | High Voltage Switching Diode |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LBAS16WT1 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Silicon Switching Diode |
| LBAS170HT1G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:SCHOTTKY BARRIER DIODE Schottky diode for high-speed switching |
| LBAS170HT3G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:SCHOTTKY BARRIER DIODE Schottky diode for high-speed switching |
| LBAS20HT1 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:High Voltage Switching Diode |
| LBAS20HT1G | 制造商:LRC Leshan Radio Co Ltd 功能描述: 制造商:LRC 功能描述: |
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