
1
3
2
Dual Series Switching Diode
LBAV99LT1G
SOT–23
3
CAHODE/ANODE
1
ANODE
2
CATHODE
MAXIMUM RATINGS
(EACH DIODE)
Rating
Reverse Voltage
Forward Current
Peak Forward Surge Current
Repetitive Peak Reverse Voltage
Average Rectified Forward Current (1)
(averaged over any 20 ms period)
Repetitive Peak Forward Current
Non–Repetitive Peak Forward Current
t = 1.0
μ
s
t = 1.0 ms
t = 1.0 S
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
FR–5 Board, (1) T
A
= 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T
A
= 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
Symbol
V
R
I
F
I
FM(surge)
V
RRM
Value
70
215
500
70
Unit
Vdc
mAdc
mAdc
V
I
F(AV)
715
mA
I
FRM
I
FSM
450
mA
A
2.0
1.0
0.5
Symbol
P
D
Max
225
Unit
mW
1.8
mW/°C
R
θ
JA
P
D
556
300
°C/W
mW
2.4
mW/°C
R
θ
JA
T
J
, T
stg
417
°C/W
°C
–65 to +150
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) (EACH DIODE)
Characteristic
OFF CHARACTERISTICS
Reverse Breakdown Voltage(I
(BR)
= 100
μ
A)
Reverse Voltage Leakage Current (V
R
= 70 Vdc)
(V
R
= 25 Vdc, T
J
= 150°C)
(V
R
= 70 Vdc, T
J
= 150°C)
Diode Capacitance
(V
R
= 0, f = 1.0 MHz)
Forward Voltage (I
F
= 1.0 mAdc)
(I
F
= 10 mAdc)
(I
F
= 50 mAdc)
(I
F
= 150 mAdc)
Reverse Recovery Time
(I
F
= I
R
= 10 mAdc, i
R(REC)
= 1.0 mAdc, R
L
= 100
) (Figure 1)
Forward Recovery Voltage
(I
F
= 10 mA, t
r
= 20 ns)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Symbol
Min
Max
Unit
V
(BR)
I
R
70
—
––
––
—
2.5
30
50
Vdc
μ
Adc
C
D
—
1.5
pF
V
F
––
—
––
––
715
855
1000
1250
mVdc
t
rr
—
6.0
ns
V
FR
—
1.75
V
.
LBAV99LT1G
LBAV99LT3G
A7
3000 Tape & Reel
10000 Tape & Reel
Device
Marking
Shipping
DEVICE MARKING ORDERING INFORMATION
LESHAN RADIO COMPANY, LTD.
1/3
A7
We declare that the material of product
compliance with RoHS requirements.