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參數(shù)資料
| 型號(hào)： | LBAV99WT1G |
| 廠商： | 樂(lè)山無(wú)線(xiàn)電股份有限公司 |
| 英文描述： | Dual Serise Switching Diodes |
| 中文描述： | 雙尺系列開(kāi)關(guān)二極管 |
| 文件頁(yè)數(shù)： | 2/3頁(yè) |
| 文件大?。?/td> | 91K |
| 代理商： | LBAV99WT1G |
LESHAN RADIO COMPANY, LTD.
LBAV99WT1 LBAV99RWT1–2/3
LBAV99WT1 LBAV99RWT1
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
FR–5 Board, (Note 1.) T
A
= 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate, (Note 2.) T
A
= 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) (Each Diode)
Characteristic
Symbol
P
D
Max
200
Unit
mW
1.6
625
300
mW/°C
°C/W
mW
R
θ
JA
P
D
2.4
417
mW/°C
°C/W
°C
R
θ
JA
T
J
,T
stg
–65 to +150
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
Reverse Voltage Leakage Current
(I
(BR)
= 100
μ
A)
(V
R
= 70 Vdc)
(V
R
= 25 Vdc, T
J
= 150°C)
(V
R
= 70 Vdc, T
J
= 150°C)
V
(BR)
I
R
70
––
––
––
––
––
2.5
30
50
1.5
Vdc
μ
Adc
Diode Capacitance
(V
R
= 0, f = 1.0 MHz)
Forward Voltage
C
D
pF
(I
F
= 1.0 mAdc)
(I
F
= 10 mAdc)
(I
F
= 50 mAdc)
(I
F
= 150 mAdc)
V
F
––
––
––
––
715
855
1000
1250
mVdc
Reverse Recovery Time
(I
F
=I
R
=10 mAdc, i
R(REC)
=1.0mAdc) (Figure 1)
Forward Recovery Voltage (I
F
= 10 mA, t
r
= 20 ns)
1. FR–5 = 1.0
×
0.75
×
0.062 in.
2. Alumina = 0.4
×
0.3
×
0.024 in. 99.5% alumina.
R
L
= 100
t
rr
––
6.0
ns
V
FR
––
1.75
V
Notes: 1. A 2.0 k
variable resistor adjusted for a Forward Current (I
F
) of 10mA.
Notes:
2. Input pulse is adjusted so I
R(peak)
is equal to 10mA.
Notes:
3. t
p
t
rr
Figure 1. Recovery Time Equivalent Test Circuit
+10 V
2.0 k
820
100
μ
H
0.1
μ
F
D.U.T.
0.1
μ
F
50
OUTPUT
PULSE
GENERATOR
t
r
50
INPUT
SAMPLING
OSCILLOSCOPE
t
p
t
10%
90%
I
F
I
R
t
rr
t
i
R(REC)
= 1.0 mA
OUTPUT PULSE
(I
F
= I
R
= 10 mA; MEASURED
at i
R(REC)
= 1.0 mA)
INPUT SIGNAL
I
F
V
R
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