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參數(shù)資料
| 型號： | LBAW56LT1G |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | Monolithic Dual Switching Diode Common Anode |
| 中文描述： | 單片雙開關(guān)二極管共陽極 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 79K |
| 代理商： | LBAW56LT1G |
LESHAN RADIO COMPANY, LTD.
LBAW56LT1-1/3
MAXIMUM RATINGS
(EACH DIODE)
Rating
Reverse Voltage
Forward Current
Peak Forward Surge Current
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR- 5 Board (1)
T
A
= 2
5
°C
erate above 2
5
°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,
(2)
T
A
= 2
5
°C
Derate above 2
5
°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
LBAW56LT1 = A1
ELECTRICAL CHARACTERISTICS
(T
A
= 2
5
°C unless otherwise noted) (EACH DIODE)
Characteristic
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I
(BR)
= 100
μ
Adc)
Reverse Voltage Leakage Current
(V
R
= 25 Vdc, T
J
= 150 °C)
(V
R
= 70 Vdc)
(V
R
= 70 Vdc, T
J
= 150 °C)
Diode Capacitance
(V
R
= 0, f = 1.0 MHz)
Forward Voltage
(I
F
= 1.0 mAdc)
(I
F
= 10 mAdc)
(I
F
= 50 mAdc)
(I
F
= 150 mAdc)
Reverse Recovery Time
(I
F
= I
R
= 10 mAdc, I
R(REC)
= 1.0 mAdc) (Figure 1) R
L
= 100
1. FR-5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Symbol
V
R
I
F
I
FM(surge)
Value
70
200
500
Unit
Vdc
mAdc
mAdc
Symbol
P
D
Max
225
Unit
mW
1.8
556
300
mW/°C
°C/W
mW
R
θ
JA
P
D
2.4
417
mW/°C
°C/W
°C
R
θ
JA
T
J
, T
stg
-55 to +150
Symbol
Min
Max
Unit
V
(BR)
70
–
Vdc
I
R
μ
Adc
–
–
–
–
30
2.5
50
2.0
C
D
pF
V
F
mVdc
–
–
–
–
–
715
855
1000
1250
6.0
t
rr
ns
Monolithic Dual Switching Diode
Common Anode
3
ANODE
1
CATHODE
2
CATHODE
SOT– 23 (TO–236AB)
LBAW56LT1
1
3
2
PbFreePackage is Available.
Device
PACKAGE
Shipping
LBAW56LT1
LBAW56LT1G
SOT-23
3000 Tape & Reel
3000 Tape & Reel
SOT-23
ORDERING INFORMATION
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LBAW56WT1G | 制造商: 功能描述:DIODE SOT-23 |
| LBAW56WT3G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Dual Switching Diodes |
| LBB110 | 功能描述:固態(tài)繼電器-PCB安裝 DPST-NC/NC 8PIN DIP RoHS:否 制造商:Omron Electronics 控制電壓范圍: 負(fù)載電壓額定值:40 V 負(fù)載電流額定值:120 mA 觸點(diǎn)形式:1 Form A (SPST-NO) 輸出設(shè)備:MOSFET 封裝 / 箱體:USOP-4 安裝風(fēng)格:SMD/SMT |
| LBB110 | 制造商:IXYS Integrated Circuits Division 功能描述:RELAY |
| LBB110E | 制造商:IXYS Integrated Circuits Division 功能描述: |
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