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參數資料
| 型號： | LBE2003S |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN microwave power transistors |
| 中文描述： | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | CERAMIC, SOT-441A, 4 PIN |
| 文件頁數： | 5/16頁 |
| 文件大?。?/td> | 126K |
| 代理商： | LBE2003S |
1997 Mar 03
5
Philips Semiconductors
Product specification
NPN microwave power transistors
LBE2003S; LBE2009S;
LCE2009S
CHARACTERISTICS
T
mb
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
μ
A
I
CBO
I
CBO
collector cut-off current
collector cut-off current
LBE2003S
LBE2009S; LCE2009S
collector cut-off current
LBE2003S
LBE2009S; LCE2009S
emitter cut-off current
LBE2003S
LBE2009S; LCE2009S
DC current gain
V
CB
= 20 V; I
E
= 0
V
CB
= 40 V; I
E
= 0
0.1
150
250
μ
A
μ
A
I
CER
V
CB
= 35 V; R
BE
= 220
V
CB
= 35 V; R
BE
= 100
V
EB
= 1.5 V; I
C
= 0
500
1000
μ
A
μ
A
I
EBO
15
15
0.05
0.2
150
150
μ
A
μ
A
h
FE
V
CE
= 5 V; I
C
= 30 mA
V
CE
= 5 V; I
C
= 110 mA
V
CB
= 18 V; V
EB
= 1.5 V;
I
E
= I
C
= 0; f = 1 MHz
C
cb
collector-base capacitance
LBE2003S
LBE2009S; LCE2009S
collector-emitter capacitance
0.3
0.6
pF
pF
C
ce
V
CE
= 18 V; V
EB
= 1.5 V;
I
E
= I
C
= 0; f = 1 MHz
LBE2003S
LBE2009S; LCE2009S
emitter-base capacitance
0.45
0.6
pF
pF
C
eb
V
CB
= 10 V; V
EB
= 1 V;
I
E
= I
C
= 0; f = 1 MHz
LBE2003S
LBE2009S; LCE2009S
1.7
3.3
pF
pF
LCE2009S IS A MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15
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