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參數(shù)資料
| 型號(hào)： | LBE2003S |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | NPN microwave power transistors |
| 中文描述： | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | CERAMIC, SOT-441A, 4 PIN |
| 文件頁(yè)數(shù)： | 8/16頁(yè) |
| 文件大小： | 126K |
| 代理商： | LBE2003S |
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1997 Mar 03
8
Philips Semiconductors
Product specification
NPN microwave power transistors
LBE2003S; LBE2009S;
LCE2009S
APPLICATION INFORMATION
Microwave performance for LBE2003S up to T
mb
= 25
°
C in a common emitter class-A test circuit; note 1.
Notes
1.
2.
3.
4.
Circuit consists of prematching circuit boards in combination with complementary input and output slug tuners.
I
C
and V
CE
regulated.
Load power for 1 dB compressed power gain.
Low level power gain associated with P
L1
.
MODE OF OPERATION
f
(GHz)
V
CE
(V)
(2)
I
C
(mA)
(2)
P
L1
(mW)
(3)
≥
200 (23)
typ. 250 (24)
G
po
(dB)
(4)
≥
10
typ. 11
Z
i
(
)
Z
L
(
)
Class-A (CW)
2
18
30
6.2 + j30
17.5 + j7
Fig.7 Prematching test circuit board for 2 GHz.
Dimensions in mm.
Striplines on a double copper-clad printed-circuit board with PTFE fibreglass dielectric (
ε
r
= 2.54); thickness: 0.8 mm.
handbook, full pagewidth
C
MCD635
input
output
C
10.5
2
3
2.5
2
12.5
6
21
3
2 2
66.5
12.5
7
10.5
14.5
2
2
0.5
1.2
1
6
3.5
5
5
LCE2009S IS A MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15
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