參數(shù)資料
型號(hào): LBSS84LT
廠商: 樂山無線電股份有限公司
英文描述: Power MOSFET 130m Amps, 50 Volts (P-Channel SOT -23)
中文描述: 功率MOSFET 130米安培,50伏特(P溝道采用SOT -23)
文件頁數(shù): 2/4頁
文件大?。?/td> 182K
代理商: LBSS84LT
LESHAN RADIO COMPANY, LTD.
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250
μ
Adc)
V(BR)DSS
50
Vdc
Zero Gate Voltage Drain Current
(VDS = 25 Vdc, VGS = 0 Vdc)
(VDS = 50 Vdc, VGS = 0 Vdc)
(VDS = 50 Vdc, VGS = 0 Vdc, TJ = 125
°
C)
Gate–Body Leakage Current (VGS =
±
20 Vdc, VDS = 0 Vdc)
IDSS
0.1
15
60
μ
Adc
IGSS
±
60
μ
Adc
ON CHARACTERISTICS
(Note 1.)
Gate–Source Threaded Voltage
(VDS = VGS, ID = 1.0 mAdc)
VGS(th)
0.8
2.0
Vdc
Static Drain–to–Source On–Resistance
(VGS = 5.0 Vdc, ID = 100 mAdc)
rDS(on)
5.0
10
Ohms
Transfer Admittance
(VDS = 25 Vdc, ID = 100 mAdc, f = 1.0 kHz)
|yfs|
50
mS
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 5.0 Vdc)
(VDS = 5.0 Vdc)
(VDG = 5.0 Vdc)
Ciss
Coss
Crss
30
pF
Output Capacitance
10
Transfer Capacitance
5.0
SWITCHING CHARACTERISTICS
(Note 2.)
Turn–On Delay Time
td(on)
tr
td(off)
tf
2.5
ns
Rise Time
(VDD = –15 Vdc, ID = –2.5 Adc,
(VDD 15 Vdc, ID 2.5 Adc,
RL = 50
)
1.0
Turn–Off Delay Time
16
Fall Time
8.0
Gate Charge
QT
6000
pC
SOURCE–DRAIN DIODE CHARACTERISTICS
Continuous Current
IS
ISM
0.130
A
Pulsed Current
0.520
Forward Voltage (Note 2.)
1. Pulse Test: Pulse Width
300
μ
s, Duty Cycle
2%.
2. Switching characteristics are independent of operating junction temperature.
VSD
2.5
V
LBSS84LT1
TYPICAL ELECTRICAL CHARACTERISTICS
0
0.3
0.4
0.1
0.6
0.2
Figure 1. Transfer Characteristics
1
1.5
2
2.5
3
ID
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 2. On–Region Characteristics
VDS = 10 V
150
°
C
25
°
C
-55
°
C
0
2
4
10
0
0.15
0.2
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
ID
6
0.05
8
0.3
0.1
3.5
0.5
0.25
1
3
9
5
7
3.25 V
2.75 V
2.25 V
2.5 V
3.0 V
VGS = 3.5 V
4
0.35
0.4
0.5
0.45
TJ = 25
°
C
LBSS84LT1 –2/4
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