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參數(shù)資料
| 型號： | LC35V1000BTS-70U |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | Asynchronous Silicon Gate 1M (131,072 words x 8 bits) SRAM |
| 中文描述： | 異步硅門100萬（131072字× 8位）的SRAM |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 178K |
| 代理商： | LC35V1000BTS-70U |
Ordering number : ENN
*
7056
41902RM (OT) No. 7056-1/9
Overview
The LC35V1000BM and LC35V1000BTS-70U are
asynchronous silicon gate CMOS static RAM devices with
a 131,072-word by 8-bit structure. They provide two chip
enable pins (CE1 and CE2) for device select/deselect
control and one output enable pin (OE) for output control.
They feature high speed, low power, and a wide operating
temperature range.This makes them optimal for use in
systems that require high speed, low power, and battery
backup. They also support easy memory expansion.
Features
Low-voltage operation: 3.0 to 3.6 V
Wide operating temperature range: –40 to +85°C
Access time: 70 ns (maximum): LC35V1000BM and
LC35V1000BTS-70U.
Low current drain
Standby mode: 0.05 μA (typical*) at Ta = +25°C *:
When V
CC
= 3.0 V
10.0 μA (maximum) at Ta = +70°C
20.0 μA (maximum) at Ta = +85°C
Data retention voltage: 2.0 to 3.6 V
No clock required (fully static circuits)
Input/output shared function pins, 3-state output pins
Package
32-pin SOP (525 mil) plastic package:
LC35V1000BM
32-pin TSOP (8
×
14 mm) plastic package:
LC35V1000BTS
Package Dimensions
unit: mm
3205A-SOP32
unit: mm
3228A-TSOP32DA
1
0
3
1
0
16
17
32
20.5
1
0.4
1.27
0.15
(0.73)
(
Preliminary
SANYO: SOP32
[LC35V1000BM-70U]
0.5
1
16
0.2
32
17
1
8.0
0
1
1
0
0.125
(0.25)
(
SANYO: TSOP32DA
[LC35V1000BTS-70U]
LC35V1000BM, BTS-70U
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Asynchronous Silicon Gate
1M (131,072 words
×
8 bits) SRAM
CMOS IC
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LC35V256ET-70W | 256K (32K words x 8 bits) SRAM Control pins: OE and CE |
| LC35V256EM | 256K (32K words x 8 bits) SRAM Control pins: OE and CE |
| LC35V256EM-70W | 256K (32K words x 8 bits) SRAM Control pins: OE and CE |
| LC35W1000BM | Asynchronous Silicon Gate 1M (131,072 words x 8 bits) SRAM |
| LC35W1000BTS-10U | Asynchronous Silicon Gate 1M (131,072 words x 8 bits) SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LC35V256EM | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:256K (32K words x 8 bits) SRAM Control pins: OE and CE |
| LC35V256EM-70W | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:256K (32K words x 8 bits) SRAM Control pins: OE and CE |
| LC35V256ET | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| LC35V256ET-70W | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:256K (32K words x 8 bits) SRAM Control pins: OE and CE |
| LC35W1000BM | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Asynchronous Silicon Gate 1M (131,072 words x 8 bits) SRAM |
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