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參數(shù)資料
| 型號(hào)： | LC35V1000BTS-70U |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | Asynchronous Silicon Gate 1M (131,072 words x 8 bits) SRAM |
| 中文描述： | 異步硅門100萬(wàn)（131072字× 8位）的SRAM |
| 文件頁(yè)數(shù)： | 3/9頁(yè) |
| 文件大?。?/td> | 178K |
| 代理商： | LC35V1000BTS-70U |
Block Diagram
No. 7056-3/9
LC35V1000BM, BTS-70U
Control
circuit
Data control circuit
Output
buffer
Input
data
buffer
Memory cell array
R
A
Pin Functions
A0 to A16
Address input
WE
Ready/write control input
OE
Output enable input
CE, CE2
Chip enable input
I/O1 to I/O8
Data I/O
V
CC
, GND
Power supply, ground
Function Table
Note: X indicates H or L.
*
: For pulse widths under 30 ns: –2.0 V
Note: This chip may be destroyed if any stress in excess of the absolute maximum ratings is applied.
Note: These parameters are not measured for all devices, but are sampled values.
Mode
CE1
CE2
OE
WE
I/O
Supply current
Ready cycle
L
H
L
H
Data output
I
CCA
I
CCA
I
CCA
I
CCS
I
CCS
Write cycle
L
H
X
L
Data input
Output disable
L
H
H
H
High impedance
Unselected
H
X
X
X
High impedance
X
L
X
X
High impedance
Parameter
Symbol
Conditions
Ratings
Unit
Maximum supply voltage
V
CC
max
V
IN
V
I/O
Topr
4.6
V
Input pin voltage
–0.3
*
to V
CC
+ 0.3
–0.3 to V
CC
+ 0.3
–40 to +85
V
I/O pin voltage
V
Operating temperature
°C
Storage temperature
Tstg
–55 to +125
°C
Specifications
Maximum Ratings
at Ta = 25°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Input capacitance
C
IN
C
I/O
V
IN
= 0 V
V
I/O
= 0 V
6
10
pF
I/O capacitance
6
10
pF
I/O Capacitances
at Ta = 25°C, f = 1 MHz
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| LC35V256EM | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:256K (32K words x 8 bits) SRAM Control pins: OE and CE |
| LC35V256EM-70W | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:256K (32K words x 8 bits) SRAM Control pins: OE and CE |
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| LC35W1000BM | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Asynchronous Silicon Gate 1M (131,072 words x 8 bits) SRAM |
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