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參數(shù)資料
| 型號： | LE25CA322TT |
| 廠商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分類： | PROM |
| 英文描述： | 4K X 8 SPI BUS SERIAL EEPROM, PDSO8 |
| 封裝： | 0.150 INCH, MSOP-8 |
| 文件頁數(shù)： | 9/14頁 |
| 文件大?。?/td> | 217K |
| 代理商： | LE25CA322TT |
LE25CA322
No.NA1678-4/14
Specifications
Absolute Maximum Rating/If an electrical stress exceeding the maximum rating is applied, the device may be damaged.
Parameter
Symbol
Conditions
Ratings
Unit
Storage temperature
-65 to +150
°C
Supply voltage
-0.5 to 6.5
V
DC input voltage
-0.5 to 5.5
V
Overshoot voltage (below 20ns)
-1.0 to 6.5
V
Operating Conditions
Parameter
Symbol
Conditions
Ratings
Unit
Operating temperature
-40 to +85
°C
Operating supply voltage
2.7 to 5.5
V
DC Electrical Characteristics
Parameter
Symbol
Conditions
min
typ
max
Unit
Supply current when reading
ICCR
CS = 0.1VDD, HOLD = WP = 0.9VDD
SI = 0.1VDD/0.9VDD, SO = Open
Operating frequency = 5MHz,
VDD = VDD Max
3mA
Supply current when writing
ICCW
VDD = VDD max., VIN = 0.1VDD/0.9VDD
tWC = 5ms
5mA
CMOS standby current
ISB
CS = VDD, VIN = VDD or VSS
VDD = VDD Max
5
μA
Input leakage current
ILI
VIN = VSS to VDD, VDD = VDD max.
2
μA
Output leakage current
ILO
VIN = VSS to VDD, VDD = VDD max.
2
μA
Input low voltage
VIL
VDD = VDD max.
-0.3
0.3VDD
V
Input high voltage
VIH
VDD = VDD min.
0.7VDD
VDD+0.3
V
Output low voltage
VOL
IOL = 3.0mA, VDD = 2.7V to 5.5V
0.4
V
Output high voltage
VOH
IOH = -0.4mA, VDD = 2.7V to 5.5V
0.8VDD
V
Capacitance at Ta = 25
°C, f = 1.0MHz
Parameter
Symbol
Conditions
min
typ
max
Unit
Output pin capacitance
CDQ
VDQ = 0V
12
pF
Input pin capacitance
CIN
VIN = 0V
6pF
Note : These parameters are sampled and not 100% tested.
AC Electrical Characteristics
Input pulse level
0.2×VDD to 0.8×VDD
Input pulse rise/fall time
10ns
Output detection voltage
0.5×VDD
Output load
30pF
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| LE25CB643M-TLM-E | 功能描述:電可擦除可編程只讀存儲器 RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 |
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