參數(shù)資料
型號: LEE1015T
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: NPN microwave power transistor
中文描述: UHF BAND, Si, NPN, RF POWER TRANSISTOR
文件頁數(shù): 3/8頁
文件大小: 47K
代理商: LEE1015T
1997 Feb 18
3
Philips Semiconductors
Product specification
NPN microwave power transistor
LEE1015T
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1.
Up to 0.2 mm from ceramic.
SYMBOL
PARAMETER
CONDITIONS
MIN.
65
MAX.
UNIT
V
CBO
V
CER
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
T
sld
collector-base voltage
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
collector current
total power dissipation
storage temperature
junction temperature
soldering temperature
open emitter
R
BE
= 10
open base
open collector
40
40
22
3
500
7.5
+150
200
235
V
V
V
V
mA
W
°
C
°
C
°
C
T
mb
= 75
°
C
t
10 s; note 1
Fig.2
Maximum power dissipation derating as a
function of mounting base temperature.
handbook, halfpage
Ptot
(W)
MLA736
50
200
50
150
Tamb (
o
C)
0
7.5
100
5.0
2.5
0
Fig.3 DC SOAR.
T
mb
= 75
°
C.
(1) Region of permissible DC operation.
(2) Possible extension provided R
BE
10
.
handbook, halfpage
MBB632
10
1
(2)
(1)
10
1
10
2
10
2
VCE (V)
IC
(A)
MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15
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