參數(shù)資料
型號(hào): LEE1015T
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: NPN microwave power transistor
中文描述: UHF BAND, Si, NPN, RF POWER TRANSISTOR
文件頁(yè)數(shù): 4/8頁(yè)
文件大小: 47K
代理商: LEE1015T
1997 Feb 18
4
Philips Semiconductors
Product specification
NPN microwave power transistor
LEE1015T
THERMAL CHARACTERISTICS
Note
1.
See “Mounting recommendations in the General part of handbook SC15”
CHARACTERISTICS
T
mb
= 25
°
C unless otherwise specified.
APPLICATION INFORMATION
Microwave performance up to T
mb
= 25
°
C in the test circuit.
SYMBOL
PARAMETER
CONDITIONS
T
j
= 75
°
C
note 1
MAX.
UNIT
R
th j-mb
R
th mb-h
thermal resistance from junction to mounting base
thermal resistance from mounting base to heatsink
12
0.6
K/W
K/W
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
μ
A
mA
μ
A
I
CBO
I
CER
I
EBO
collector cut-off current
collector cut-off current
emitter cut-off current
V
CB
= 40 V; I
E
= 0
V
CE
= 40 V; R
BE
= 10
V
EB
= 1.5 V; I
C
= 0
400
20
400
MODE OF OPERATION
f
(MHz)
V
CE
(V)
I
C
(mA)
P
L1
(W)
G
po
(dB)
Class A
860
20
140
>1; typ. 1.3
>13; typ. 14.5
MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15
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